Fairchild Semiconductor KSH45H11I Datasheet
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
KSH45H11
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage - 80 V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 8 A
I
CP
Collector Current (Pulse) - 16 A
PC
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
a
=25°C) 1.75 W
T
J
Junction Temperature 150 °C
T
STG
Storage T emperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 80 V
I
CEO
Collector Cut-off Current V
CE
= - 80V, IB = 0 - 10 µA
I
EBO
Emitter Cut-off Cu rre n t V
BE
= - 5V, IC = 0 - 50 µA
hFE
DC Current Gain V
CE
= - 1V, IC = - 2A
V
CE
= - 1V, IC = - 4A
60
40
V
CE
(sat) Collector-Emitter Saturation Voltage IC = - 8A, IB = - 0.4A - 1 V
V
BE
(on) Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A - 1.5 V
f
T
Current Gain Bandwidth Product VCE= - 10A, IC = - 0.5A 40 MHz
Cob
Collector Capacitance V
CB
= - 10V, f = 1MHz 230 pF
tON
Turn On Time IC = - 5A
I
B1
= - IB2 = - 0.5A
135 ns
tSTG
Storage Time 500 ns
tF
Fall Time 100 ns
KSH45H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular KSE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
©2002 Fairchild Semiconductor Corporation
KSH45H11
Rev. A4, October 2002
Typical Characteristics
Figure 1. DC current Gain Figure 2. Safe Operating Area
Figure 3. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -1V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-1 -1 0 -100 -1000
-0.01
-0.1
-1
-10
-100
5ms
100
µ
s
500
µ
s
1ms
DC
ICP(max)
IC(max)
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 1 75
0
5
10
15
20
25
P
C
[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
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