Fairchild Semiconductor KSH42C Datasheet
KSH42C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP42C
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH42C
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PC
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage -100 V
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -5 V
Collector Current (DC) -6 A
Collector Current (Pulse) -10 A
Base Current -2 A
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 -100 V
CEO
I
CEO
I
CES
I
EBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = -6A, IB = -600mA -1.5 V
V
CE
(on) * Base-Emitter On Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
= -60V , IB = 0 -50 µA
CE
Collector Cut-off Current VCE = -100V, V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= -5V, IC = 0 -0.5 mA
BE
= -4V, IC = -0.3A
CE
V
= -4V, IC = -3A
CE
= -6A, IC = -4A -2 V
CE
= -10V , IC = -500mA 3 MHz
CE
= 0 -10 µA
BE
30
15 75
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH42C
1000
VCE = -2V
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
[pF], CAPACITANCE
ob
C
1000
100
10
VCE(sat)
IC = 10 I
B
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
VCC = -30V
IC = 10.I
B
1
s], TURN ON TIME
µ
[
0.1
D
, t
R
t
t
R
tD VBE(off)=-5V
0.01
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance Figure 4. Turn On Time
10
1
s], TURN OFF TIME
µ
[
0.1
F
,t
STG
t
0.01
-0.01 -0.1 -1 -10
t
STG
t
F
IC[A], COLLECTOR CURRENT
VCC = -30V
IC = 10.I
-100
B
-10
ICP(max)
IC(max)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -1 0 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
µ
s
500
µ
1ms
s
5ms
DC
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
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