Fairchild Semiconductor KSE5742, KSE5741, KSE5740 Datasheet
KSE5740/5741/5742
High Voltage Power Switching In Inductive
Circuits
• High Voltage Power Darlington TR
• Small Engine lgnition
• Switching Regulators
• Inverters
• Solenold and Relay Drivers
• Motor Control
NPN Silico n Darlingt on Transistor
1
TO-220
1.Base 2.Collector 3.Emitter
KSE5740/5741/5742
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
BV
(sus) Collector-Emitter Sustaining Voltage
CEO
V
CEV
VEBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Collector-Emitter Voltage : KSE5740
Emitter-Base Voltage 8 V
Collector Current (DC) 8 A
*Collector Current (Pulse) 16 A
Base Current (DC) 2.5 A
*Base Current (Pulse) 5 A
Collector Dissipation 80 W
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
: KSE5740
: KSE5741
: KSE5742
: KSE5741
: KSE5742
TC=25°C unless otherwise noted
300
350
400
600
700
800
V
V
V
V
V
V
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: KSE5740
: KSE5741
: KSE5742
I
CEV
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC =4A, IB = 0.2A
V
CE
(sat) Base-Emitter Saturation Voltage IC =4A, IB = 0.2A
V
BE
V
F
t
D
t
R
t
S
t
F
t
SV
Cross-over Time 2 µs
t
C
* PW=5ms, Duty Cycle=10%
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Collector Cut-off Current V
Emitter Cut-off Current VEB = 8V, IC= 0 75 mA
DC Current Gain V
Diode Forward Voltage IF =5A 2.5 V
Delay Time V
Rise Time 0.5 µs
Storage Time 8 µs
Fall Time 2 µs
Voltage Storage Time IC(pk) = 6A, VCE(pk) = 250V
= 50mA, IB=0 300
I
C
=Rate Value, V
CEV
=5V, IC = 0.5A
CE
=5V, IC = 4A
V
CE
=8A, IB= 0.4A
I
C
I
=8A, IB = 0.4A
C
= 250V, IC(pk) = 6A
CC
= I
B1
= 25µs
P
= 0.25A
B2
I
t
=1.5V 1 mA
BE(OFF)
Duty Cycle≤1%
1= 0.06A, VBE (off) = 5V
I
B
350
400
50
100
200
400
0.04 µs
4 µs
2
3
2.5
3.5
V
V
V
V
V
V
V
Typical Characteristics
KSE5740/5741/5742
1000
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10
t
1
0.1
[µs],TURN ON TIME
D
,t
R
t
R
t
D
VCE = 5V
VCC = 250V
IC = 20I
B
IB1 = I
B2
10
VBE(sat)
1
VCE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
IC = 20 I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
VCC = 250V
IC = 20I
B
IB1 = I
B2
1
[µs],TURN OFF TIME
F
,t
STG
t
t
STG
t
F
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Turn On Time Figure 4. Turn Off Time
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
0.1
0.1 1 10
IC[A], COLLECTOR CURRENT
100
10
µ
s
DC
µ
s
E5740
E5741
E5742
5ms
1ms
20
16
12
8
[A], COLLECTOR CURRENT
C
I
4
0
0 100 200 300 400 500
E5740
E5741
E5742
VBE(off)= -5V
VCE[V],COLLECTOR EMITTER VOLTAGE
Rev. A1, June 2001
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