Fairchild Semiconductor KSE5020 Datasheet
KSE5020
Feature
• High Voltage, High Quality High Speed Switching : tF=0.1µs
• WIDE SOA
KSE5020
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
IB
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current (DC) 3 A
Collector Current (Pulse) 6 A
Base Current (DC) 1 A
Collector Dissipation (TC=25°C) 30 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1=-IB2= 0.6A
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1 V
CE
(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V
V
BE
C
ob
f
T
t
ON
t
S
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V
Collector-Emitter Breakdown Voltage IC = 5mA, R
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn ON Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
BE
L = 2mH, Clamped
= 500V, IE = 0 10 µA
CB
= 5V, IC = 0 10 µA
EB
= 5V, IC = 0.3A
CE
= 5V, IC = 1.5A
V
CE
= 10V, f = 1MHz 50 pF
CB
= 10V, IC = 0.3A 18 MHz
CE
= 200V
CC
5I
1 = -2.5IB2=IC=2A
B
RL = 100Ω
=∞ 500 V
500 V
15
50
8
0.5 µs
hFE Classification
Classification R O Y
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
15 ~ 30 20 ~ 40 30 ~ 50
Typical Characteristics
KSE5020
=500mA
I
B
I
=400mA
B
=300mA
I
B
I
B
=100mA
I
B
IB=50mA
IB=20mA
IB=0
=200mA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
012345678910
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
100
10
hFE, DC CURRENT GAIN
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat),V
BE
0.01
V
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC=5I
B
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VBE[V], BASE-EMITTER VOLTAGE
VCE=5V
Figure 3. Collector-Emitter Saturation Voltage
Baser-Emitter Saturation Voltage
10
1
0.1
[us], FALL TIME
F
t
[us], STORAGE TIME
[us], TURN ON TIME
ON
t
STG
t
0.01
0.1 1 10
Figure 5. Turn On Time
©2001 Fairchild Semiconductor Corporation
IC[A], COLLECTOR CURRENT
VCC=200V
=5IB1=-2.5I
I
C
t
STG
t
ON
t
F
Figure 4. Base-Emitter On Voltage
B2
Rev. A1, June 2001
Loading...