Fairchild Semiconductor KSE45H Datasheet
KSE45H Series
General Purpose Power Switchi n g Applica tions
• Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A
• Fast Switching Speeds
• Complement to KSE44H
KSE45H Series
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Emitter Voltage : KSE45H 1,2
Emitter-Base Voltage - 5 V
Collector Current (DC) - 10 A
*Collector Current (Pulse) - 20 A
Collector Dissipation (TC=25°C) 50 W
Collector Dissipation (Ta=25°C) 1.67 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CES
I
EBO
h
FE
(sat) *Collector-Emitter Saturation Voltage
V
CE
(sat) *Base-Emitter Saturat ion Voltage IC = - 8A, IB = - 0.8A -1.5 V
V
BE
f
T
Cob
tON
tSTG
tF
* Pulse test: PW≤300µs, Duty cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Current V
*DC Current Gain
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 500 ns
Fall Time 100 ns
TC=25°C unless otherwise noted
: KSE45H 4,5
: KSE45H 7,8
: KSE45H 10,11
TC=25°C unless otherwise noted
= Rated, V
CE
= - 5V, IC = 0 -100 µA
EB
= - 1V, IC = - 2A 35
V
CE
= - 8A, IB = - 0.8A
I
C
= - 8A, IB = - 0.4A
I
C
= - 10V, IC = - 0.5A 40 MHz
CE
= - 10V, f = 1MHz 230 pF
CB
=20V, IC = - 5A
CC
I
= - IB2 = - 0.5A
B1
CEO
- 30
- 45
- 60
- 80
, V
= 0 -10 µA
EB
60
135 ns
-1
-1
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
KSE45H Series
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
[pF], CAPACITANCE
ob
C
10
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
VCE = 1V
f=1MHZ
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.01 -0.1 -1 -10 -100
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
100
10
1ms
DC
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
45H 1,2
45H 4,5
45H 7,8
45H 10,11
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
µ
s
µ
1
s
10µs
100µs
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
60
50
40
30
20
[W], POWER DISSIPATION
C
10
P
0
0 25 50 75 1 00 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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