Fairchild Semiconductor KSE44H Datasheet
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSE44H Series
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse test: PW≤300µs, Duty cycle≤2%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage : KSE44H 1,2
: KSE44H 4,5
: KSE44H 7,8
: KSE44H 10,11
30
45
60
80
V
V
V
V
V
EBO
Emitter- Base Voltage 5 V
I
C
Collector Current (DC) 10 A
I
CP
*Collector Current (Pulse) 20 A
P
C
Collector Dissipation (TC=25°C) 50 W
P
C
Collector Dissipation (Ta=25°C) 1.67 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CES
Collector Cut-off Current V
CE
= Rated V
CEO
, V
EB
= 0 10 µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, IC = 0 100 µA
h
FE
*DC Current Gain
: KSE44H 1,4,7,10
: KSE44H 2,5,8,11
V
CE
= 1V, IC = 2A 35
60
V
CE
(sat)
*Collector-Emitter Saturation Voltage
: KSE44H 1, 4, 7 10
: KSE44H 2, 5, 8,11
I
C
= 8A, IB = 0.8A
I
C
= 8A, IB = 0.4A
1
1
V
V
V
BE
(sat) *Base-Emitter Saturation Voltage IC = 8A, IB = 0.8A 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, IC = 0.5A 50 MHz
Cob
Output Capacitance V
CB
= 10V, f = 1MHz 130 pF
tON
Turn ON Time V
CC
=20V, IC = 5A
I
B1
= - IB2 = 0.5A
300 ns
tSTG
Storage Time 500 ns
tF
Fall Time 140 ns
KSE44H Series
General Purpose Power Switching Applications
• Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A
• Fast Switching Speeds
• Complement to KSE45H
1.Base 2.Collector 3.Emitter
1
TO-220
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSE44H Series
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
Figure 5. Power Derating
0.01 0.1 1 10
1
10
100
1000
VCE = 1V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10 100
0.01
0.1
1
10
IC = 10 I
B
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
110100
10
100
1000
f=100MHZ
C
ob
[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
0.1
1
10
100
44H 1,2
44H 4,5
44H 7,8
44H 10,11
100µs
10
µ
s
1
µ
s
1ms
DC
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
P
C
[W], POWER DISSIPATION
Tc[oC], CASE TEMPERATURE
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