Fairchild Semiconductor KSE350 Datasheet
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSE350
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 300 V
V
CEO
Collector-Emitter Voltage - 300 V
VEBO
Emitter-Base Voltage - 5 V
IC
Collector Current - 500 mA
PC
Collector Dissipation (TC=25°C) 20 W
TJ
Junction T emperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Tes t C ondition Min. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 -300 V
I
CBO
Collector Cut-off Current V
CB
= - 300V, IE = 0 -100 µA
IEBO
Emitter Cut-off Current V
BE
= - 3V, IC = 0 -100 µA
hFE
DC Current Gain V
CE
= - 10V, IC = - 50mA 30 240
KSE350
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to KSE340
1
TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
KSE350
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-1 -10 -100 -1000
1
10
100
1000
VCE = 10V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10I
B
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-10 -100 -1000
-10
-100
-1000
-10000
500
µ
s
100
µ
s
1ms
DC
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
P
C
[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
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