Fairchild Semiconductor KSE210 Datasheet
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f
• Complement to KSE200
KSE210
=65MHz@IC= -100mA (Min.)
T
KSE210
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
PC
TJ
T
STG
Collector-Base Voltage - 40 V
Collector-Emitter Voltage - 25 V
Emitter-Base Voltage - 8 V
Collector Current - 5 A
Collector Dissipation (TC=25°C) 15 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
IEBO
hFE1
h
FE2
h
FE3
V
(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA
CE
(sat) Base-Emitter Saturation Voltage IC = - 5A, IB = - 1A -2.5 V
V
BE
(on) Base-Emitter On Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 -25 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= -40V, IE = 0
CB
= - 40V, IE =0 @ TJ = 125°C
V
CB
= - 8V, IC = 0 -100 nA
BE
= - 1V, IC = - 500mA
CE
V
= - 1V, IC = - 2A
CE
= - 2V, IC = - 5A
V
CE
= - 2A, IC = - 200mA
I
C
I
= - 5A, IB = - 1A
C
= - 1V, IC = - 2A -1.6 V
CE
= - 10V, IC = - 100mA 65 MHz
CE
= - 10V, IE = 0, f = 1MHz 120 pF
CB
-100
-100nAµA
70
4510180
-0.3
-0.75
-1.8
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Typical Characteristics
KSE210
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
VCE = -2V
VCE = -1V
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
-1000
-100
-10
[pF], CAPACITANCE
ob
C
-1
-0.1 -1 -10 -100
VCB[V], COLLECTOR BASE VOLTAGE
f=0.1MHZ
IE=0
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.01 -0.1 -1 -10
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
-100
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
µ
s
500
1ms
µ
s
5ms
DC
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
24
21
18
15
12
9
6
[W], POWER DISSIPATION
C
P
3
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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