Fairchild Semiconductor KSE200 Datasheet
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f
• Complement to KSE210
KSE200
=65MHz @ IC=100mA (Min.)
T
KSE200
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
PC
TJ
T
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 25 V
Emitter- Base Voltage 8 V
Collector Current 5 A
Collector Dissipation (TC=25°C) 15 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
IEBO
hFE
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA
V
CE
(sat) Base- Emitter Saturation Voltage IC=5A, IB=1A 2.5 V
V
BE
(on) Base-Emitter On Voltage VCE=1V, IC=2A 1.6 V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 25 V
Collector Cut-off Current VCB=40V, IE=0
Emitter Cut-off Current VBE=8V, IC=0 100 nA
DC Current Gain VCE=1V, IC=500mA
Current Gain Bandwidth Product VCE=10V, IC=100mA 65 MHz
Output Capacitance VCB=10V, IE=0, f=0.1MHz 80 pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
=40V, IE=0 @ TJ=125°C
V
CB
=1V, IC=2A
V
CE
V
=2V, IC=5A
CE
=2A, IC=200mA
I
C
=5A, IB=1A
I
C
100
100nAµA
70
4510180
0.3
0.75
1.8
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Typical Characteristics
KSE200
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE=1V
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
VCE = 2V
f=0.1MHZ
IE=0
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CURRENT
C
I
100
µ
s
500
1ms
µ
s
5ms
DC
1
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance Figure 4. Forward Bias Safe Operating Area
25
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A1, January 2001
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