Fairchild Semiconductor KSE171, KSE170, KSE172 Datasheet
KSE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
KSE170/171/172
TO-126
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1. Emitter 2.Collector 3.Base
Symbol Parameter Value Units
V
V
V
I
I
I
P
CBO
CEO
EBO
C
CP
B
C
Collector-Base Voltage : KSE170
Collector-Emitter Voltage : KSE170
Emitter-Base Voltage - 7 V
Collector Current (DC) - 3 A
Collector Current (Pulse) - 6 A
Base Current - 1 A
Collector Dissipation (TC=25°C) 12.5 W
Collector Dissipation (T
T
J
T
STG
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
: KSE171
: KSE172
: KSE171
: KSE172
=25°C) 1.5 W
a
TC=25°C unless otherwise noted
- 60
- 80
- 100
- 40
- 60
- 80
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA
CE
(sat) Base-Emitter Saturation Voltage IC = - 1.5A, IB = - 150mA
V
BE
(on) Base-Emitter On Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breaksown Voltage
: KSE170
: KSE171
: KSE172
Collector Cut-off Current : KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
= 10mA, IB = 0
I
C
= - 60V, IB = 0
V
CB
= - 80V, IE = 0
V
CB
= - 100V, IE = 0
V
CB
V
= - 60V, IE = 0, TC = 150°C
CB
= - 80V, IE = 0, TC = 150°C
V
CB
= - 100V, IE = 0, TC = 150°C
V
CB
= - 7V, IC = 0 -0.1 µA
BE
= - 1V, IC = - 100mA
CE
= - 1V, IC = - 500mA
V
CE
= - 1V, IC = - 1.5A
V
CE
-40
-60
-80
50
30
12
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
250
-0.3
I
= - 1.5A, IB = - 150mA
C
= - 3A, IB = - 600mA
I
C
-0.9
-1.7
-1.5
= - 3A, IB = - 600mA
I
C
= - 1V, IC = - 500mA -1.2 V
CE
= - 10V, IC = - 100mA 50 MHz
CE
= - 10V, IE = 0, f = 0.1MHz 50 pF
CB
-2.0
V
V
V
V
V
V
V
V
V
µA
µA
µA
mA
mA
mA
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Typical Charactristics
KSE170/171/172
IC/IB=10
IC/IB=5
1000
VCE = -1V
100
, DC CURRENT GAIN
FE
h
10
-0.1 -1
IC[A], COLLECTOR CURRENT
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
VBE(sat) IC/IB=10
-0.8
-0.6
(sat)[V], SATURATION VOLTAGE
-0.4
CE
-0.2
(sat), V
-0.0
BE
V
VBE@VCE= -1V
VCE(sat)
-0.01 -0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
f=0.1MHZ
IE=0
100
1000
100
[ns], TURN ON TIME
10
[pF], CAPACITANCE
ob
C
10
R
,t
D
t
t
R
t
D
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
100
µ
500
s
µ
s
50ms
DC
KSE170
KSE171
KSE172
VCEMAX.
[ns], TURN OFF TIME
STG
,t
F
t
1000
t
STG
t
100
10
F
-0.1 -1
IC[A], COLLECTOR CURRENT
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Loading...