Fairchild Semiconductor KSD986, KSD985 Datasheet
KSD985/986
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
KSD985/986
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
Collector-Base Voltage 150 V
Collector-Emitter Volage
: KSD985
: KSD986
V
EBO
I
C
ICP
IB
P
C
PC
T
J
T
STG
* PW≤300µs, Duty Cycle10%
Emitter-Base Voltage 8.0 V
Collector Current (DC) 1.5 A
*Collector Current (Pulse) 3.0 A
Base Current 0.15 A
Collector Dissipation (Ta=25°C) 1.0 W
Collector Dissipation (TC=25°C) 10 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
CER
ICEX1
I
CEX2
IEBO
h
FE1
h
FE2
(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 1mA 1.5 V
V
CE
(sat) *Base-Emitter Saturation Voltage IC = 1A, IB = 1mA 2.0 V
V
BE
t
ON
t
STG
t
F
* Pulse Test: PW≤350µs, Duty Cycle≤2%
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
*DC Current Gain V
Turn ON Time V
Storage Time 1.0 µs
Fall Time 1.0 µs
TC=25°C unless otherwise noted
60
80
TC=25°C unless otherwise noted
= 60V, IE = 0 10 µA
CB
= 60V, R
CE
@ T
C
= 60V, VBE(off) = -1.5A
CE
= 60V, VBE(off) = -1.5A
V
CE
@ T
C
= 5V, IC = 0 1.0 mA
EB
= 2V, IC = 0.5A
CE
= 2V, IC = 1A
V
CE
= 50V, IC = 1A
CC
= - IB2 = 1mA
I
B1
R
= 50Ω
L
BE
= 125°C
= 125°C
V
V
= 51Ω
1.0 mA
10
1.0
1000
2000 30000
0.5 µs
µA
mA
hFE Classification
Classification R O Y
h
FE2
©2000 Fairchild Semiconductor International Rev. A, February 2000
2000 ~ 5000 4000 ~ 10000 8000 ~ 30000
Typical Characteristics
KSD985/986
2.0
1.6
1.2
0.8
[A], COLLECTOR CURRENT
0.4
C
I
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IB = 220uA
IB = 200uA
IB = 180uA
IB = 160uA
IB = 140uA
IB = 120uA
IB = 100uA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
VBE(sat)
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
0.1 1 10
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 1000 I
IB = 80uA
10000
VCE = 2V
1000
, DC CURRENT GAIN
FE
h
100
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
160
B
140
120
100
DERATING
C
80
60
dT(%), I
40
20
0
0 25 5 0 75 100 125 150 175 200
S/b Limited
Dissipation Limited
TC[oC], CASE TEMPERATURE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
[A], COLECTOR CURRENT
0.50
C
I
0.25
0.00
0 102030405060708090100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Areas Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Figure 4. Derating Curve Of Safe Operating Areas
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
3ms
Dissipation Limited
DC
1ms
300us
S/b Limited
30us
100us
Rev. A, February 2000
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