Fairchild Semiconductor KSD880 Datasheet
Low Frequency Power Amplifier
• Complement to KSB834
KSD880
KSD880
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 7 V
Collector Current 3 A
Base Current 0.3 A
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
BVCEO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.4 1 V
CE
(on) Base-Emitter On Voltage V
V
BE
f
T
C
ob
t
ON
t
STG
t
F
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1.5 µs
Fall Time 0.8 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 60V, IE = 0 100 µA
CB
= 7V, IC = 0 100 µA
EB
= 5V, IC = 0.5A
CE
= 5V, IC = 3A
V
CE
= 5V, IC = 0.5A 0.7 1 V
CE
= 5V, IC = 0.5A 3 MHz
CE
= 10V, IE = 0, f = 1MHz 70 pF
CB
= 30V, IC = 1A
CC
= - IB2 = 0.2A
I
B1
R
= 30Ω
L
60
20
0.8 µs
300
hFE Classification
Classification O Y G
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
60 ~ 120 100 ~ 200 150 ~ 300
Typical Characteristics
KSD880
4
3
2
IB = 90mA
IB = 80mA
IB = 70mA
IB = 60mA
IB = 50mA
IB = 40mA
IB = 30mA
1000
100
IB = 20mA
1
[A], COLLECTOR CURRENT
C
I
0
02468
IB = 10mA
IB = 0
VCE[V], COLLECTOR-EMITT E R VOL TA G E
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
4
3
2
1
[A], COLLECTOR CURRENT
C
I
0
0.0 0.2 0. 4 0.6 0.8 1. 0 1.2 1.4 1. 6
VBE[V], BASE-EMITTER VOLTAGE
10
VCE = 5V
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VCE(sat)
IC[A], COLLECTOR CURRENT
VCE = 5V
IC = 10 I
B
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Emitter Saturation Voltage
10
IC(Pulse) MAX.
IC(Continous) MAX.
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
vs Collector Current
10ms
100ms
1ms
1s
DC(T
C
=25
℃
)
MAX.
CEO
V
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 1 00 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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