Fairchild Semiconductor KSD794, KSD794A Datasheet
KSD794/794A
Audio Frequency Power Amplifier
• Complement to KSB744/KSB744A
KSD794/794A
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Collector- Base Voltage 70 V
Collector-Emitter Voltage : KSD794
Emitter- Base Voltage 5 V
Collector Current (DC) 3 A
*Collector Current (Pulse) 5 A
Base Current (DC) 0.6 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 10 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
IEBO
hFE1
h
FE2
(Sat) * Collector-Emitter Saturation Voltage IC =1.5A, IB = 0.15A 0.3 2 V
V
CE
(Sat) * Base-Em itter Saturation Voltage IC =1.5A, IB = 0.15A 0.8 2 V
V
BE
f
T
C
ob
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pu lsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
: KSD794A
TC=25°C unless otherwise noted
= 45V, IE = 0 1 µA
CB
= 3V, IC = 0 1 µA
EB
= 5V, IC = 20mA
CE
= 5V, IC = 0.5A
V
CE
= 5V, IE = 0.1A 60 MHz
CE
= 10V, IE = 0, f = 1MHz 40 pF
CB
30
60
45
60
70
100 320
V
V
hFE Classificntion
Classification R O Y
h
FE2
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
60 ~ 120 100 ~ 200 160 ~ 320
Typical Characteristics
KSD794/794A
2.0
IB = 20mA
1.6
IB = 18mA
IB = 16mA
1.2
IB = 14mA
IB = 12mA
IB = 10mA
0.8
IB = 8mA
IB = 6mA
[A], COLLECTOR CURRENT
0.4
C
I
0.0
0 1020304050
IB = 4mA
IB = 2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1E-3 0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 10 I
1000
VCE = 5V
100
, DC CURRENT GAIN
FE
h
10
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
B
100
[pF], CAPACITANCE
ob
C
10
110100
IE=0
f=1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
1
0.01 0.1 1
(MHz), CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Figure 4. Collector Output Capacitance
10ms
PW=100us
1ms
DC
S/b Limited
D794
MAX.
CEO
V
D794A
Rev. A1, June 2001
VCE = 5V
10
IC(Pulse) MAX.
IC(DC) MAX.
1
Dissipation Limited
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
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