Fairchild Semiconductor KSD73 Datasheet
KSD73
Low Frequency High Power Amplifier
• Collector-Base Voltage : V
• Collector Current : I
C
= 5A
• Collector Dissipation : P
= 100V
CBO
= 30W (TC=25°C)
C
KSD73
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage 100 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current 5 A
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 0.5A 2.0 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1.5 V
V
BE
f
T
(on) Base-Emitter ON Voltage V
V
BE
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 100 V
Collector-Emitter Breakdown Voltage IC = 20mA, IB = 0 60 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 100V, IE = 0 5 mA
CB
= 10V, IC = 1.0A 70 240
CE
= 10V, IC = 0.3A 20 MHz
CE
= 10V, IE = 1.0A 0.75 V
CE
hFE Classification
Classification O Y
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
70 ~ 140 120 ~ 240
Typical Characteristics
KSD73
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
[A], COLLECTOR CURRENT
0.4
C
I
0.2
0.0
0 2 4 6 8 10 12 14 16 18 20
IB = 14mA
IB = 12mA
IB = 10mA
IB = 8mA
IB = 6mA
IB = 4mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IB = 2mA
IC = 10 I
1000
VCE = 10V
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
B
f=1MHz
I
=0
E
100
[pF], CAPACITANCE
ob
C
10
110100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
Thermal limita t ion
*10ms
Thermal limita t ion
*200ms
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
S/B limitation
S/B limitation
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 1 00 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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