Fairchild Semiconductor KSD526 Datasheet
Power Amplifier Applications
• Complement to KSB596
KSD526
KSD526
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current 4 A
Base Current 0.4 A
Collector Dissipation ( TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
BV
CEO
BV
EBO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.45 1.5 V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
Collector Cut-off Current V
Emitter Cut-off Current V
Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 80 V
Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 5 V
DC Current Gain V
Current Gain Bandwidth Product V
Collector Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 80V, IE = 0 30 µA
CB
= 5V, IC = 0 100 µA
EB
= 50V, IC = 0.5A
CE
= 5V, IC = 3A
V
CE
= 5V, IC = 3A 1 1.5 V
CE
= 5V, IC = 0.5A 3 8 MHz
CE
= 10V, IE = 0, f = 1MHz 90 pF
CB
40
15 50
240
hFE Classification
Classification R O Y
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSD526
4.0
IB = 240mA
3.2
IB = 200mA
IB = 160mA
IB = 120mA
IB = 60mA
2.4
1.6
[A], COLLECTOR CURRENT
0.8
C
I
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
4
3
2
1
[A], COLLECTOR CURRENT
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VBE[V], BASE-EMITTER VOLTAGE
IB = 100mA
IB = 80mA
IB = 40mA
IB = 20mA
VCE = 5V
1000
VCE = 5V
100
, DC CURRENT GAIN
FE
h
10
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Emitter Saturation Voltage
100
ICMAX. (pulse)
10
IC MAX. (continuous)
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
1ms
10ms
100ms
1S
DC
(T
C
=25
℃
)
MAX
CEO
V
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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