Fairchild Semiconductor KSD5018 Datasheet
KSD5018
Built-in Resistor at B-E for Motor Driv e
• High Voltage Power Darlington TR
KSD5018
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
Sym-
bol
V
CBO
V
CEO
V
EBO
I
C
ICP
IB
P
C
T
J
T
STG
Collector- Base Voltage 600 V
Collector- Emitter Voltage 275 V
Emitter Base Voltage 10 V
Collector Current (DC) 4 A
*Collector Current (Pulse) 6 A
Base Current 0.5 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Parameter Value Units
Electrical Characteristics
Symbol Parameter Te s t Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB = 0.05A, L = 25mH 275 V
CEO
Collector-Emitter Breakdown Voltage IC = 1mA, R
BV
CER
I
CES
I
EBO
V
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 5mA
CE
(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 5mA 2 V
V
BE
Collector Cut-off Current V
Emitter Cut-off Current V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 500V 1 mA
CE
= 10V, IC = 0 1 mA
EB
= 3A, IB = 20mA
I
C
= 330Ω 600 V
BE
1.5
1.5
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSD5018
10000
VCE = 5V
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. Base-Emitter Saturation Voltage
1000
100
VBE(sat)
VCE(sat)
IC = 400 I
B
100
10
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
[pF], CAPACITANCE
ob
C
10
110100
VCB[V], COLLECTOR-BASE VOLTAGE
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
50
45
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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