Fairchild Semiconductor KSD401 Datasheet
TV Vertical Deflection Output
• Collector-Base Voltage : V
• Collector Current : I
C
=2A
• Collector Dissipation : P
• Complement to KSB546
=200V
CBO
=25W(TC=25°C)
C
KSD401
KSD401
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage 200 V
Collector-Emitter Voltage 150 V
Emitter-Base Voltage 5 V
Collector Current 2 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 1 V
V
CE
f
T
Collector-Base Breakdown Voltage IC = 500uA, IE = 0 200 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 150 V
Emitter-Base Breakdown Voltage IE = -500uA, IC = 0 5 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 150V, IE = 0 50 µA
CB
= 10V, IC = 0.4A 40 400
CE
= 10V, IC = 0.4A 5 MHz
CE
hFE Classification
Classification R O Y G
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
Typical Characteristics
KSD401
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
[A], COLLECTOR CURRENT
0.2
C
I
0.1
0.0
0 5 10 15 20 25 30 35 40 45 50
IB = 8mA
IB = 7mA
IB = 6mA
IB = 5mA
IB = 4mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IB = 3mA
IB = 2mA
IC = 10 I
IB = 1mA
B
1000
VCE = 10V
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
100
[pF], CAPACITANCE
ob
C
10
110100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
℃
1. Tc=25
2. *single pulse
Thermal limitat io n
1
[A], COLLECTOR CURRENT
C
I
0.1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
*1ms
S/B limitation
S/B limitation
Figure 4. Collector Output Capacitance
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 1 00 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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