Fairchild Semiconductor KSD362 Datasheet
KSD362
B/W TV Horizontal Deflection Output
• Collector-Base Voltage : V
• Collector Current : I
• Collector Dissipation : P
C
=5A
=150V
CBO
=40W(TC=25°C)
C
KSD362
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage 150 V
Collector-Emitter Voltage 70 V
Emitter-Base Voltage 8 V
Collector Current 5 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1.5 V
V
BE
f
T
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 150 V
Collector-Emitter Breakdown Voltage IC = 2mA, R
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 8 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 100V, IE = 0 20 µA
CB
= 5V, IC = 5A 20 140
CE
= 5V, IC = 0.5A 10 MHz
CE
= ∞ 70 V
BE
hFE Classification
Classification N R O
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
20 ~ 50 40 ~ 80 70 ~ 140
Typical Characteristics
KSD362
IB = 45mA
IB = 40mA
IB = 35mA
IB = 30mA
5
4
3
IB = 50mA
IB = 25mA
2
IB = 20mA
IB = 15mA
[A], COLLECTOR CURRENT
1
C
I
0
0 4 8 12 16 20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IB = 10mA
IB = 5mA
IC = 10 I
10000
VCE = 5V
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
B
100
[pF], CAPACITANCE
ob
C
10
110100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
Thermal
limitation
*200ms
1
[A], COLLECTOR CURRENT
C
I
0.1
1. Tc=25
2. *single pulse
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
S/B limitation
℃
*10ms
S/B limitation
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 1 00 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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