Fairchild Semiconductor KSD288 Datasheet
KSD288
Power Regulator
Low Frequency High Power Amplifier
• Collector-Base Voltage : V
• Collector Dissipation : P
=80V
CBO
=25W(TC=25°C)
C
KSD288
1
1.Base 2.Collector 3.Emitter
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage 80 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 5 V
Collector Current 3 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=1A, IB=0.1A 1 V
V
CE
Collector-Base Breakdown Voltage IC=500µA, IE=0 80 V
Collector-Emitter Breakdown Voltage IC=10mA,IB=0 55 V
Emitter-Base Breakdown Voltage IE=500µA, IC=0 5 V
Collector Cut-off Current VCB=50V,IE=0 50 µA
DC Current Gain VCE=5V,IC=0.5A 40 240
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 70 ~ 140 120 ~ 240
Typical Characteristics
KSD288
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Ic[A], COLLECTOR CURRENT
0.2
0 2 4 6 8 10 12 14 16 18 20
IB = 10mA
IB = 9mA
IB = 8mA
IB = 7mA
IB = 6mA
IB = 5mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
IC[A], COLLECTOR CURRENT
VBE(sat)
(sat)
CE
V
0.1 1 10
IB = 4mA
IB = 3mA
IB = 2mA
IB = 1mA
Ic = 10 I
10000
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
B
1000
100
10
[pF], CAPACITANCE
OB
C
1
110100
f = 1MHz
IE=0
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1.Tc=25oC
2.*Single Pulse
Thermal limita t ion
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
DC
S/B limitation
*1ms
Thermal limita t ion
S/B limitation
Figure 4. Collector Output Capacitance
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
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