Fairchild Semiconductor KSD261 Datasheet
KSD261
Low Frequency Power Amplifier
• Complement to KSA643
• Collector Power Dissipation : P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
=500mW
C
KSD261
1
1. Emitter 2. Base 3. Collector
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 5 V
Collector Current 500 mA
Collector Power Dissipation 500 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=0.5A, IB=50mA 0.18 0.4 V
V
CE
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 20 V
Emitter-Base Breakdown Voltage IE=100µA, IC=0 5 V
Collector Cut-off Current VCB=25V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=1V, IC=0.1A 40 400
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y G
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
Typical Characteristics
KSD261
500
450
400
350
300
250
200
150
100
[mA], COLLECTOR CURRENT
C
I
50
0
012345678910
IB = 2.0mA
IB = 1.8mA
IB = 1.6mA
IB = 1.4mA
IB = 1.2mA
IB = 1.0mA
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100 1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IC = 10 I
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
VCE = 1V
IC[mA], COLLECTOR CURRENT
B
100
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VCE = 1V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
IE = 0
f = 1MHz
Rev. A2, November 2002
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