Fairchild Semiconductor KA1M0380RB, KA1H0380RB, KA1L0380RB, KA1L0380B Datasheet
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KA1L0380B/KA1L0380RB/KA1M0380RB/
KA1H0380RB
Fairchild Power Switch(SPS)
Features
• Precision fixed operating frequency
•
KA1L0380B/KA1L0380RB
•
KA1M0380RB
•
KA1H0380RB
(67KHz)
(100KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lock out
• Internal high voltage sense FET
•Auto restart (
KA1L0380RB/KA1M0380RB/KA1H0380RB)
(50KHz)
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The S PS consist of
high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator,
under voltage lock out, leading edge blanking, optimized gate
turn-on/turn-off driver, therma l shut down protection, over voltage protection, temperature compensated precision current
sources for loop compensation and fault protection circuit.
Compared to discrete MOSFET and controller or RCC switching converter solution, a SPS can reduce total component count,
design size, weight and at the same time increase & efficiency,
productivity, and system reliability. It has a basic platform well
suited for cost effective design i n either a f lyback converter or a
forward converter.
TO-220F-4L
1
1. GND 2. DRAIN 3. V
CC
4. FB
Internal Block Diagram
#3 V
CC
32V
µ
5
A
#4 FB
7.5V
25V
©2000 Fairchild Semiconductor International
9V
1mA
2.5R
1R
+
−
+
−
Thermal S/D
OVER VOLTAGE S/D
OSC
−
+
5V
Vref
L.E.B
0.1V
Good
logic
S
R
Internal
bias
Q
S
R
Power on reset
#2 DRAIN
SFET
Q
#1 GND
Rev. .5.0
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Absolute Maximum Ratings
Parameter Symbol Value Unit
Drain-source (GND) voltage
Drain-Gate voltage (R
(1)
=1MΩ)V
GS
Gate-source (GND) voltage V
(4)
(2)
(3)
=25°C) I
C
Drain current pulsed
Single pulsed avalanche energy
Avalanche current
Continuous drain current (T
Continuous drain current (TC=100°C) I
Supply voltage V
Analog input voltage range V
Total power dissipation
Operating temperature T
Storage temperature T
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, V
4. L=13µH, starting Tj=25°C
=50V, RG=25Ω, starting Tj=25°C
DD
V
DSS
DGR
GS
I
DM
E
AS
I
AS
D
D
CC
FB
P
D
Derating 0.28 W/°C
OPR
STG
800 V
800 V
±30 V
12 A
DC
95 mJ
6A
3.0 A
2.1 A
DC
DC
30 V
−0.3 to V
SD
V
35 W
−25 to +85 °C
−55 to +150 °C
2
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BV
Zero gate voltage drain current I
Static drain-source on resistance
Forward transconductance
(Note)
(Note)
DSS
DSS
R
DS(ON)
gfs VDS=15V, ID=1.5A 1.5 2.5 - S
Input capacitance Ciss
Reverse transfer capacitance Crss - 24.9 Turn on delay time td(on) V
Rise time tr - 95 Turn off delay time td(off) - 150 Fall time tf - 60 Total gate charge
(gate-source+gate-drain)
Qg
Gate-source charge Qgs - 7.2 Gate-drain (Miller) charge Qgd - 12.1 -
VGS=0V, ID=50µA 800 - - V
VDS=Max., Rating,
V
=0V
GS
=0.8Max., Rating,
V
DS
V
=0V, TC=125°C
GS
--50µA
- - 200 µA
VGS=10V, ID=1.5A - 4.0 5.0 Ω
- 779 -
=0V, VDS=25V,
V
GS
f=1MHz
DD
=0.5BV
DSS
, ID=3.0A
-40(MOSFET switchin g
time are essentially
independent of
operating temperature)
V
=10V, ID=3.0A,
V
GS
DS
=0.5BV
(MOSFET
DSS
--34
switching time are
essentially independent of
operating temperature)
pFOutput capacitance Coss - 75.6 -
nS
nC
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
--- -=
S
R
3
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
REFERENCE SECTION
Output voltage
Temperature Stability
OSCILLATOR SECTION
Initial accuracy F
Frequency change with temperature
PWM SECTION
Maximum duty cycle Dmax
FEEDBACK SECTION
Feedback source current I
Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤V
OVER CURRENT PROTECTION SECTION
Over current protection I
UVLO SECTION
Start threshold voltage Vth(H) - 14 15 16 V
Minimum operating voltage Vth(L) After turn on 9 10 11 V
TOTAL STANDBY CURRENT SECTION
Start current I
Operating supply current
(control part only)
V
zener voltage V
CC
SHUTDOWN SECTION
Shutdown Feedback voltage V
Thermal shutdown temperature (Tj)
Over voltage protection voltage V
(1)
(1)(2)
Vref Ta=25°C 4.80 5.00 5.20 V
Vref/∆T −25°C≤Ta≤+85°C-0.30.6mV/°C
KA1L0380B 45 50 55
KA1L0380RB 45 50 55
OSC
KA1M0380RB 61 67 73
KA1H0380RB 90 100 110
(2)
∆F/∆T −25°C≤Ta≤+85°C-±5 ±10 %
KA1L0380B 74 77 80
KA1L0380RB 74 77 80
KA1M0380RB 74 77 80
KA1H0380RB 64 67 70
Ta=25°C, 0V≤Vfb≤3V 0.7 0.9 1.1 mA
SD
4.0 5.0 6.0 µA
Max. inductor current 1.89 2.15 2.41 A
VCC=14V 0.1 0.3 0.45 mA
Ta=25°C 6 12 18 mA
ICC=20mA 30 32.5 35 V
-6.97.58.1V
- 140 160 - °C
-232528V
(1)
FB
L(max)
ST
I
OPR
Z
SD
T
SD
OVP
kHz
%
Notes:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
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