Fairchild Semiconductor KA1H0680RFB Datasheet
©2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.2
Features
• Precision fixed operating frequency
• KA1M0680B,KA 1M0680RB (67KHz)
• KA1H0680B,KA1H0680RFB (100KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lock out
• Internal high voltage sense FET
• Latch up mode (KA1M0680B,KA1H0680B)
• Auto restart (KA1M0680RB,KA1H0680RFB)
• Soft start
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver , thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or R
CC
switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-3PF-5L
1.DRAIN 2.GND 3 .V
CC
4.FB 5.Soft St art
TO-3P-5L
1
1
Internal Block Diagram
#3 V
CC
32V
5
µ
A
5V
2.5R
1R
1mA
0.1V
+
−
OVER VOLTAGE S/D
+
−
7.5V
25V
Thermal S/D
S
R
Q
Power on reset
+
−
L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#1 DRAIN
#2 GND
#4 FB
#5 Soft Start
9V
KA1M0680B/KA1M0680RB/
KA1H0680B/KA1H0680RFB
Fairchild Power S witch(FPS)
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
2
Absolute Maximum Ratings
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, V
DD
=50V, RG=25Ω, starting Tj=25°C
4. L=13µH, starting Tj=25°C
Parameter Symbol Value Unit
Maximum Drain voltage
(1)
V
D,MAX
800 V
Drain Gate voltage (R
GS
=1MΩ)V
DGR
800 V
Gate source (GND) voltage V
GS
±30 V
Drain current pulsed
(2)
I
DM
24.0 A
DC
Single pulsed avalanche energy
(3)
E
AS
455 mJ
Avalanche current
(4)
I
AS
16 A
Continuous drain current (T
C
=25°C) I
D
6.0 A
DC
Continuous drain current (TC=100°C) I
D
4.0 A
DC
Maximum Supply voltage V
CC,MAX
30 V
Input voltage range V
FB
−0.3 to V
SD
V
Total power dissipation
P
D
150 W
Derating 1.21 W/°C
Operating ambient temperature T
A
−25 to +85 °C
Storage temperature T
STG
−55 to +150 °C
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
Pulse test: P ulse width ≤ 300µS, duty cycle ≤ 2%
Parameter Symbol Condition Min. Typ. Max. Unit
Drain source breakdown voltage BV
DSS
VGS=0V, ID=50µA 800 - - V
Zero gate voltage drain current I
DSS
VDS=Max., Rating,
V
GS
=0V
--50µA
V
DS
=0.8Max., Rating,
V
GS
=0V, TC=125°C
- - 200 µA
Static drain source on resistance
(note)
R
DS(ON)VGS
=10V, ID=4.0A - 1.6 2.0 Ω
Forward transconductance
(note)
gfs VDS=15V, ID=4.0A 1.5 2.5 - S
Input capacitance Ciss
V
GS
=0V, VDS=25V,
f=1MHz
- 1600 pFOutput capacitance Coss - 140 -
Reverse transfer capacitance Crss - 42 Turn on delay time t
d(on)
VDD=0.5BV
DSS
, ID=6.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-60nS
Rise time tr - 150 Turn off delay time t
d(off)
- 300 -
Fall time tf - 130 Total gate charge
(gate-source+gate-drain)
Qg
V
GS
=10V, ID=6.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
-70nC
Gate source charge Qgs - 16 Gate drain (Miller) charge Qgd - 27 -
S
1
R
--- -=
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
4
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage V
START
- 141516 V
Stop threshold voltage V
STOP
After turn on 9 10 11 V
OSCILLATOR SECTION
Initial accuracy F
OSC
KA1M0680B 61 67 73
kHz
KA1M0680RB 61 67 73
KA1H0680B 90 100 110
KA1H0680RFB 90 100 110
Frequency change with temperature
(2)
∆F/∆T −25°C ≤ Ta ≤ +85°C-±5 ±10 %
Maximum duty cycle Dmax
KA1M0680B 74 77 80
%
KA1M0680RB 74 77 80
KA1H0680B 64 67 70
KA1H0680RFB 64 67 70
FEEDBACK SECTION
Feedback source current I
FB
Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA
Shutdown Feedback voltage V
SD
-6.97.58.1V
Shutdown delay current Idelay Ta=25°C, 5V ≤ Vfb ≤ V
SD
4.0 5.0 6.0 µA
SOFT START SECTION
Soft Start Voltage V
SS
V
FB
=2V 4.7 5.0 5.3 V
Soft Start Current I
SS
Sync & S/S=GND 0.8 1.0 1.2 mA
REFERENCE SECTION
Output voltage
(1)
Vref Ta=25°C 4.805.005.20 V
Temperature Stability
(1)(2)
Vref/∆T −25°C ≤ Ta ≤ +85°C-0.30.6mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit I
OVER
Max. inductor current 3.52 4.00 4.48 A
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
T
SD
- 140 160 - °C
Over voltage protection voltage V
OVP
- 232528 V
TOTAL DEVICE SECTION
Start Up current I
START
VCC=14V 0.1 0.3 0.45 mA
Operating supply current
(control part only)
I
OP
Ta=25°C 6 12 18 mA
V
CC
zener voltage V
Z
ICC=20mA 30 32.5 35 V
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