Fairchild Semiconductor KA1M0565R, KA1H0565R Datasheet
KA1M0565R/KA1H0565R
Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Precision fixed operating frequency
• KA1M0565R (67KHz),KA1H0565R (100KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lock out
• Internal high voltage sense FET
•Auto restart
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or R
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-220F-4L
1
1. GND 2. DRAIN 3. V
switching converter solution, a Fairchild
CC
4. FB
CC
Internal Block Diagram
#3 V
CC
32V
A
µ
5
#4 FB
7.5V
25V
©2001 Fairchild Semiconductor Corporation
9V
1mA
2.5R
1R
+
−
+
−
Thermal S/D
OVER VOLTAGE S/D
OSC
−
+
5V
Vref
L.E.B
0.1V
Good
logic
S
R
Internal
bias
Q
S
R
Power on reset
#2 DRAIN
SFET
Q
#1 GND
Rev.1.0.2
KA1M0565R/KA1H0565R
Absolute Maximum Ratings
Parameter Symbol Value Unit
Maximum Drain voltage
Drain Gate voltage (R
(1)
=1MΩ)V
GS
Gate-source (GND) voltage V
Drain current pulsed
Single pulsed avalanche energy
Continuous drain current (T
(2)
(3)
=25°C) I
C
Continuous drain current (TC=100°C) I
Maximum Supply voltage V
Input voltage range V
Total power dissipation
Operating ambient temperature T
Storage temperature T
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=30mH, V
=50V, RG= 27Ω, starting Tj=25°C
DD
V
D,MAX
DGR
GS
I
DM
E
AS
D
D
CC,MAX
FB
P
D
650 V
650 V
±30 V
20 A
230 mJ
5.0 A
3.5 A
30 V
−0.3 to V
SD
140 W
Derating 1.11 W/°C
A
STG
−25 to +85 °C
−55 to +150 °C
DC
DC
DC
V
2
KA1M0565R/KA1H0565R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Drain source breakdown voltage BV
Zero gate voltage drain current I
Static drain source on resistance
Forward transconductance
(note)
(note)
DSS
DSS
R
DS(ON)
gfs VDS=50V, ID=2.5A 2.5 - - S
Input capacitance Ciss
Reverse transfer capacitance Crss - 38.8 Turn on delay time t
d(on)
Rise time tr - - 150
Turn off delay time t
d(off)
Fall time tf - - 130
Total gate charge
(gate-source+gate-drain)
Qg
Gate source charge Qgs - 10.3 Gate drain (Miller) charge Qgd - 22.3 -
VGS=0V, ID=50µA 650 - - V
VDS=Max., Rating,
V
=0V
GS
=0.8Max., Rating,
V
DS
V
=0V, TC=125°C
GS
--50µA
- - 200 µA
VGS=10V, ID=2.5A - 1.76 2.2
- 1457 -
=0V, VDS=25V,
V
GS
f=1MHz
VDD=0.5BV
DSS
, ID=5.0A
--60
(MOSFET switching
time are essentially
independent of
- - 300
operating temperature)
V
=10V, ID=5.0A,
V
GS
DS
=0.5BV
(MOSFET
DSS
--56
switching time are
essentially independent of
operating temperature)
Ω
pFOutput capacitance Coss - 130 -
nS
nC
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S
--- -=
R
3
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