Fairchild Semiconductor KA1H0280RB, KA1M0280RB Datasheet

KA1M0280RB/KA1H0280RB

Fairchi ld Pow er Sw itch( FP S)

www.fairchildsemi.com

Features

• Precision Fixed Operating Frequency

• KA1M0280RB (67kHz) , KA1H0280RB (100kHz)

• Pulse by Pulse Over Current Limiting

• Over Load Protection

• Over Voltage Protection (Min. 23V)

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

•Auto Restart

Description

The

Fairchild Power Switch(FPS)

designed for an off line SMPS with minimal external
components. The

Fairchild Power Switch(FPS)

voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver , thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or R
solution, a

Fairchild Power Switch(FPS)

component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.

TO-220F-4L

1

1. GND 2. DRAIN 3. V

CC

product family is specially

switching converter

CC

can reduce total

4. FB

consist of high

Internal Block Diagram

#3 V

CC

32V

5

µ

A

#4 FB

+

25V

−

+

−

7.5V

©2003 Fairchild Semiconductor Corporation

5V

Vref

OSC

9V

1mA

2.5R
1R

OVER VOLTAGE S/D

−

+

Thermal S/D

L.E.B

0.1V

Good

logic

S
R

Internal

bias

Q

S
R

Power on reset

#2 DRAIN

SFET

Q

#1 GND

Rev.1.0.2

KA1M0280RB/KA1H0280RB

Absolute Maximum Ratings

Parameter Symbol Value Unit

Maximum Drain Voltage
Drain-Gate Voltage (R

(1)

=1MΩ)V

GS

Gate-Source (GND) Voltage V

(4)

(2)

(3)

=25°C) I

C

Drain Current Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Continuous Drain Current (T
Continuous Drain Current (TC=100°C) I
Maximum Supply Voltage V
Input Voltage Range V

Total Power Dissipation
Operating Ambient Temperature T

Storage Temperature T

Notes:

1. T

= 25°C to 150°C

j

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L = 51mH, V

4. L = 13µH, starting T

= 50V, RG = 25Ω, starting Tj = 25°C

DD

= 25°C

j

V

D,MAX

DGR

GS

I

DM

E

AS

I

AS

D
D

CC,MAX

FB

P

D

800 V
800 V
±30 V

8.0 A
90 mJ

8A

2.0 A

1.3 A
30 V

-0.3 to V

SD

35 W

Darting 0.28 W/°C

A

STG

-25 to +85 °C

-55 to +150 °C

DC

DC
DC

V

2

KA1M0280RB/KA1H0280RB

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

Drain-Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Static Drain-Source on Resistance
Forward Transconductance

(Note)

(Note)

DSS

DSS

R

DS(ON)

gfs VDS=50V, ID=1.0A 1.5 2.5 - S

Input Capacitance Ciss

Reverse Transfer Capacitance Crss - 25 ­Turn on Delay Time t

d(on)

Rise Time tr - 28 ­Turn Off Delay Time t

d(off)

Fall Time tf - 24 ­Total Gate Charge

(Gate-Source+Gate-Drain)

Qg

Gate-Source Charge Qgs - 15 ­Gate-Drain (Miller) Charge Qgd - 20 -

VGS=0V, ID=50µA 800 - - V
VDS=Max., Rating,

V

=0V

GS

V

=0.8Max., Rating,

DS

V

=0V, TC=125°C

GS

--50µA

- - 200 µA

VGS=10V, ID=1.0A - 5.6 7.0 Ω

- 250 -

V

=0V, VDS=25V,

GS

f=1MHz

VDD=0.5BV

DSS

, ID=2.0A

-21­(MOSFET switching
time are essentially
independent of

-77­operating temperature)
V

=10V, ID=2.0A,

V

GS
DS

=0.5BV

(MOSFET

DSS

--60
switching time are

essentially independent of
operating temperature)

pFOutput Capacitance Coss - 52 -

nS

nC

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2.

1

S

--- -=

R

3