Fairchild Semiconductor KA1H0265R Datasheet
©2003 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.2
Features
• Precision Fixed Operating Frequency
• KA1M0265R (70kHz) , KA1H0265R (100kHz)
• Pulse by Pulse Over Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 23V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
•Auto Restart
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or R
CC
switching converter solution, a Fairchild
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-220F-4L
1. GND 2. DRAIN 3. V
CC
4. FB
1
Internal Block Diagram
#3 V
CC
32V
5
µ
A
9V
2.5R
1R
1mA
0.1V
+
−
OVER VOLTAGE S/D
+
−
7.5V
25V
Thermal S/D
S
R
Q
Power on reset
+
−
L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#2 DRAIN
#1 GND
#4 FB
KA1M0265R/KA1H0265R
Fairchi ld Pow er Sw itch( FP S)
KA1M0265R/KA1H0265R
2
Absolute Maximum Ratings
Notes:
1. T
j
= 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 51mH, V
DD
= 50V, RG = 25Ω, starting Tj = 25°C
Parameter Symbol Value Unit
Maximum Drain Voltage
(1)
V
D,MAX
650 V
Drain-Gate Voltage (R
GS
=1MΩ)V
DGR
650 V
Gate-Source (GND) Voltage V
GS
±30 V
Drain Current Pulsed
(2)
I
DM
8.0 A
DC
Single Pulsed Avalanche Energy
(3)
E
AS
68 mJ
Continuous Drain Current (T
C
=25°C) I
D
2.0 A
DC
Continuous Drain Current (TC=100°C) I
D
1.3 A
DC
Maximum Supply Voltage V
CC,MAX
30 V
Input Voltage Range V
FB
-0.3 to V
SD
V
Total Power Dissipation
P
D
42 W
Darting 0.33 W/°C
Operating Ambient Temperature T
A
-25 to +85 °C
Storage Temperature T
STG
-55 to +150 °C
KA1M0265R/KA1H0265R
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
2.
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
DSS
VGS=0V, ID=50µA 650 - - V
Zero Gate Voltage Drain Current I
DSS
VDS=Max., Rating,
V
GS
=0V
--50µA
V
DS
=0.8Max., Rating,
V
GS
=0V, TC=125°C
- - 200 µA
Static Drain-Source on Resistance
(Note)
R
DS(ON)
VGS=10V, ID=1.0A - 5.0 6.0
Ω
Forward Transconductance
(Note)
gfs VDS=50V, ID=1.0A 1.5 2.5 - S
Input Capacitance Ciss
V
GS
=0V, VDS=25V,
f=1MHz
- 550 pFOutput Capacitance Coss - 38 -
Reverse Transfer Capacitance Crss - 17 Turn on Delay Time t
d(on)
VDD=0.5BV
DSS
, ID=2.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-20nS
Rise Time tr - 15 Turn Off Delay Time t
d(off)
-55-
Fall Time tf - 25 Total Gate Charge
(Gate-Source+Gate-Drain)
Qg V
GS
=10V, ID=2.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
--35
nC
Gate-Source Charge Qgs - 3 Gate Drain (Miller) Charge Qgd
-12-
S
1
R
--- -=
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