Fairchild Semiconductor KA1H0265R Datasheet

©2003 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev.1.0.2

Features

• Precision Fixed Operating Frequency

• KA1M0265R (70kHz) , KA1H0265R (100kHz)

• Pulse by Pulse Over Current Limiting

• Over Load Protection

• Over Voltage Protection (Min. 23V)

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

•Auto Restart

Description

The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or R

CC

switching converter solution, a Fairchild
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.

TO-220F-4L

1. GND 2. DRAIN 3. V

CC

4. FB

1

Internal Block Diagram

#3 V

CC

32V

5

µ

A

9V

2.5R
1R

1mA

0.1V

+

−

OVER VOLTAGE S/D

+

−

7.5V

25V

Thermal S/D

S
R

Q

Power on reset

+

−

L.E.B

S
R

Q

OSC

5V

Vref

Internal

bias

Good

logic

SFET

#2 DRAIN

#1 GND

#4 FB

KA1M0265R/KA1H0265R

Fairchi ld Pow er Sw itch( FP S)

KA1M0265R/KA1H0265R

2

Absolute Maximum Ratings

Notes:

1. T

j

= 25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L = 51mH, V

DD

= 50V, RG = 25Ω, starting Tj = 25°C

Parameter Symbol Value Unit

Maximum Drain Voltage

(1)

V

D,MAX

650 V

Drain-Gate Voltage (R

GS

=1MΩ)V

DGR

650 V

Gate-Source (GND) Voltage V

GS

±30 V

Drain Current Pulsed

(2)

I

DM

8.0 A

DC

Single Pulsed Avalanche Energy

(3)

E

AS

68 mJ

Continuous Drain Current (T

C

=25°C) I

D

2.0 A

DC

Continuous Drain Current (TC=100°C) I

D

1.3 A

DC

Maximum Supply Voltage V

CC,MAX

30 V

Input Voltage Range V

FB

-0.3 to V

SD

V

Total Power Dissipation

P

D

42 W

Darting 0.33 W/°C

Operating Ambient Temperature T

A

-25 to +85 °C

Storage Temperature T

STG

-55 to +150 °C

KA1M0265R/KA1H0265R

3

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2.

Parameter Symbol Condition Min. Typ. Max. Unit

Drain-Source Breakdown Voltage BV

DSS

VGS=0V, ID=50µA 650 - - V

Zero Gate Voltage Drain Current I

DSS

VDS=Max., Rating,
V

GS

=0V

--50µA

V

DS

=0.8Max., Rating,

V

GS

=0V, TC=125°C

- - 200 µA

Static Drain-Source on Resistance

(Note)

R

DS(ON)

VGS=10V, ID=1.0A - 5.0 6.0

Ω

Forward Transconductance

(Note)

gfs VDS=50V, ID=1.0A 1.5 2.5 - S

Input Capacitance Ciss

V

GS

=0V, VDS=25V,

f=1MHz

- 550 ­pFOutput Capacitance Coss - 38 -

Reverse Transfer Capacitance Crss - 17 ­Turn on Delay Time t

d(on)

VDD=0.5BV

DSS

, ID=2.0A
(MOSFET switching
time are essentially
independent of
operating temperature)

-20­nS

Rise Time tr - 15 ­Turn Off Delay Time t

d(off)

-55-

Fall Time tf - 25 ­Total Gate Charge

(Gate-Source+Gate-Drain)

Qg V

GS

=10V, ID=2.0A,

V

DS

=0.5BV

DSS

(MOSFET
switching time are
essentially independent of
operating temperature)

--35
nC

Gate-Source Charge Qgs - 3 ­Gate Drain (Miller) Charge Qgd

-12-

S

1

R

--- -=

KA1M0265R/KA1H0265R

4

Electrical Characteristics (Control Part)

(Continued)

(Ta=25°C unless otherwise specified)

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION

Start Threshold Voltage V

START

-141516V

Stop Threshold Voltage V

STOP

After turn on 9 10 11 V

OSCILLATOR SECTION

Initial Accuracy F

OSC

KA1M0265R 61 67 73

kHz

KA1H0265R 90 100 110

Frequency Change With Temperature

(2)

∆F/∆T-25°C ≤ Ta ≤ +85°C-±5 ±10 %

Maximum Duty Cycle Dmax

KA1M0265R 74 77 80

%

KA1H0265R 64 67 70

FEEDBACK SECTION

Feedback Source Current I

FB

Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA

Shutdown Feedback Voltage V

SD

- 6.9 7.5 8.1 V

Shutdown Delay Current Idelay Ta=25°C, 5V ≤ Vfb ≤ V

SD

4.0 5.0 6.0 µA

REFERENCE SECTION

Output Voltage

(1)

Vref Ta=25°C 4.80 5.00 5.20 V

Temperature Stability

(1)(2)

Vref/∆T-25°C ≤ Ta ≤ +85°C-0.30.6mV/°C

CURRENT LIMIT (SELF-PROTECTION) SECTION

Peak Current Limit I

OVER

Max. inductor current 1.05 1.2 1.35 A

PROTECTION SECTION

Thermal Shutdown Temperature (Tj)

(1)

T

SD

- 140 160 - °C

Over Voltage Protection Voltage V

OVP

-232528V

TOTAL DEVICE SECTION

Start-Up Current I

START

VCC=14V 0.1 0.3 0.4 mA

Operating Supply Current
(Control Part Only)

I

OP

Ta=25°C61218mA

V

CC

Zener Voltage V

Z

ICC=20mA 30 32.5 35 V

KA1M0265R/KA1H0265R

5

Typical Performance Characteristics

(These characteristic graphs are normalized at Ta=25°C)

Fig.1 Operating Frequency

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Fosc

Fig.2 Feedbac k S our c e Cur r ent

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Ifb

Fig.3 Oper ating Current

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Iop

Fig.4 Max Inductor Current

0.8

0.85

0.9

0.95

1

1.05

1.1

-25 0 25 50 75 100 125 150

Ipeak

Fig. 5 S tart up Current

0.5

0.7

0.9

1.1

1.3

1.5

-25 0 25 50 75 100 125 150

Istart

Fig. 6 S tart Threshold Volt a ge

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstart

Temperature [ °C] Temperature [°C]

Temperature [°

C

] Temperature [°C]

Temperature [°

C

]Temperature [°C]

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Figure 5. Start up C u rrent Figure 6. Start Threshold Voltage

I

over

I

ST

V

th(H)

I

FB

I

OP

KA1M0265R/KA1H0265R

6

Typical Performance Characteristics

(Continued)

(These characteristic graphs are normalized at Ta=25°C)

Fig.7 S top Threshold Volt a ge

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstop

F i g.8 Ma xi mu m Dut y Cycle

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Dmax

Fig.9 Vcc Zener Voltage

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Vz

Fig.10 S hutdown Feedback Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vsd

Fig.11 Shutdown Delay Cur r ent

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Idelay

Fig.12 Over V ol tage Prot ec tion

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vovp

Temperature [ °C] Temperature [°C]

Temperature [ °

C

] Temperature [°C]

Temperature [°

C

]Temperature [°C]

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Figure 9. V

CC

Zener Voltage Figure 10. Shutdown Feedback Voltage

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

V

th(L)

KA1M0265R/KA1H0265R

7

Typical Performance Characteristics

(Continued)

(These characteristic groups are normalized at Ta=25°C)

Fig.14 Drain Source Turn-on

Resistance

0

0.5

1

1.5

2

2.5

-25 0 25 50 75 100 125 150

Rdson

Temperature [

°

C

]

Figure 13. Static Drain-Source on Resi stance

()

KA1M0265R/KA1H0265R

8

Package Dimensions

TO-220F-4L

KA1M0265R/KA1H0265R

9

Package Dimensions

(Continued)

TO-220F-4L(Forming)

KA1M0265R/KA1H0265R

8/25/03 0.0m 001

Stock#DSxxxxxxxx

 2003 Fairchild Semiconductor Corporation

LIFE SUPPORT POL I CY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

2. A critical component in any component of a life support
device or sy stem whose failure to perform can be
reasonably expec ted to cause the failur e of the life support
device or system, or to affect its safety or effec t iv ene ss .

www.fairchildsemi.com

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHA NGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREI N TO IMPROVE RELIABILITY, FUNCTIO N OR DESIGN. FAIRCH ILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHE RS.

Ordering Information

TU : Non Forming Type
YDTU : Forming Type

Product Number Package Rating Fosc

KA1M0265R-TU TO-220F-4L

650V, 2A 67kHz

KA1M0265R-YDTU TO-220F-4L(Forming)
KA1H0265R-TU TO-220F-4L

650V, 2A 100kHz

KA1H0265R-YDTU TO-220F-4L(Forming)