Fairchild Semiconductor KA1H0165R, KA1H0165RN Datasheet
KA1H0165RN/KA1H0165R
Fairchi ld Pow er Sw itch( FP S)
www.fairchildsemi.com
Features
• Precision Fixed Operating Frequency (100kHz)
• Pulse by Pulse Over Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 23V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit compared to discrete MOSFET and
controller or R
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
8-DIP
1.6.7.8. Drain
2. GND
3. VCC
4. F/B
5. S/S
switching converter solution The Fairchild
CC
TO-220F-4L
1
1
1. GND
2. Drain
3. VCC
4. F/B
Internal Block Diagram
V
CC
32V
Soft Start
*
5V
FB
©2003 Fairchild Semiconductor Corporation
µ
A
5
7.5V
25V
* KA1H0165RN
2.5R
1mA
1R
9V
+
−
+
−
Thermal S/D
OVER VOLTAGE S/D
OSC
−
+
5V
Vref
L.E.B
0.1V
Good
logic
S
R
Internal
bias
Q
S
R
Power on reset
SFET
Q
DRAIN
GND
Rev.1.0.3
KA1H0165RN/KA1H0165R
Absolute Maximum Ratings
Parameter Symbol Value Unit
Maximum Drain Voltage
Drain-Gate Voltage (R
(1)
=1MΩ)V
GS
Gate-Source (GND) Voltage V
Drain Current Pulsed
Single Pulsed Avalanche Energy
Continuous Drain Current (T
(2)
(3)
=25°C) I
C
Continuous Drain Current (TC=100°C) I
Maximum Supply Voltage V
Input Voltage Range V
Total Power Dissipation
Operating Ambient Temperature T
Storage Temperature T
Notes:
1. T
= 25°C to 150°C
j
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 80mH, V
= 50V, RG = 27Ω, starting Tj = 25°C
DD
V
D,MAX
DGR
GS
I
DM
E
AS
D
D
CC,MAX
FB
P
D
650 V
650 V
±30 V
4.0 A
95 mJ
1.0 A
0.7 A
30 V
-0.3 to V
SD
40 W
Darting 0.32 W/°C
A
STG
-25 to +85 °C
-55 to +150 °C
DC
DC
DC
V
2
KA1H0165RN/KA1H0165R
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source on Resistance
Forward Transconductance
(Note)
(Note)
DSS
DSS
R
DS(ON)VGS
gfs VDS=50V, ID=0.5A 0.5 - - S
Input Capacitance Ciss
Reverse Transfer Capacitance Crss - 10 Turn on Delay Time t
d(on)
Rise Time tr - 4 Turn off Delay Time t
d(off)
Fall Time tf - 10 Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 3 Gate-Drain (Miller) Charge Qgd - 9 -
VGS=0V, ID=50µA 650 - - V
VDS=Max., Rating,
V
=0V
GS
V
=0.8Max., Rating,
DS
V
=0V, TC=125°C
GS
--50µA
- - 200 µA
=10V, ID=0.5A - 8 10
- 250 -
V
=0V, VDS=25V,
GS
f=1MHz
VDD=0.5B V
DSS
, ID=1.0A
-12(MOSFET switching
time is essentially
independent of
-30operating temperature)
V
=10V, ID=1.0A,
GS
V
DS
=0.5B V
(MOSFET
DSS
--21
switching time is essentially
independent of operating
temperature)
Ω
pFOutput Capacitance Coss - 25 -
nS
nC
Note:
1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S
--- -=
2.
R
3
KA1H0165RN/KA1H0165R
Electrical Characteristics (Control Part)
(Continued)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage V
Stop Threshold Voltage V
START
STOP
After turn on 9 10 11 V
- 141516 V
OSCILLATOR SECTION
Initial Accuracy F
Frequency Change With Temperature
(2)
OSC
∆F/∆T-25°C ≤ Ta ≤ +85°C-±5 ±10 %
Ta=25°C 90 100 110 kHz
Maximum Duty Cycle Dmax - 64 67 70 %
FEEDBACK SECTION
Feedback Source Current I
Shutdown Feedback Voltage V
FB
SD
Shutdown Delay Current Idelay Ta=25°C, 5V ≤ Vfb ≤ V
Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA
- 6.9 7.5 8.1 V
4.0 5.0 6.0 µA
SD
SOFT START SECTION (KA1H0165RN)
Soft Start Voltage V
Soft Start Current I
SS
SS
VFB=2V 4.7 5.0 5.3 V
Sync & S/S=GND 0.8 1.0 1.2 mA
REFERENCE SECTION
Output Voltage
(1)
Temperature Stability
(1)(2)
Vref Ta=25°C 4.80 5.00 5.20 V
Vref/∆T-25°C ≤ Ta ≤ +85°C-0.30.6mV/°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit I
OVER
Max. inductor current 0.53 0.6 0.67 A
PROTECTION SECTION
Thermal Shutdown Temperature
Over Voltage Protection Voltage V
(1)
T
SD
OVP
- 140 160 - °C
- 232528 V
TOTAL DEVICE SECTION
Start-Up Current I
Operating Supply Current
(Control Part Only)
Zener Voltage V
V
CC
START
I
OP
Z
VCC=14V 0.1 0.3 0.4 mA
Ta=25°C 6 12 18 mA
ICC=20mA 30 32.5 35 V
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
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