Fairchild Semiconductor JFTJ105 Datasheet
J105 / J106 / J107 / JFTJ105
J105
JFTJ105
J106
J107
G
D
G
G
S
D
TO-92
NOTE: Source & Drain
are interchangeable
N-Channel Switch
This device is designed for analog or digital switching applications where
very low On Resistance is mandatory. Sourced from Process 59.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
SOT-223
V
DG
V
GS
I
GF
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage 25 V
Gate-Source Voltage - 25 V
Forward Gate Current 10 mA
Operating and Stora ge Junction Temperature Range -55 to +150
S
C
°
5
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
J105 - 107 JFTJ105
P
D
R
JC
θ
R
JA
θ
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 125
625
5.0
1,000
8.0
mW
mW/°C
C/W
°
C/W
°
N-Channel Switch
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
I
D(off)
V
GS(off)
ON CHARACTERISTICS
I
DSS
r
DS(on)
Gate-Source Breakdown Voltage
I
= - 10 µA, VDS = 0
G
Gate Reverse Current VGS = - 15 V, VDS = 0
= - 15 V, VDS = 0, TA = 100°C
V
GS
- 25 V
- 3.0
- 200
Gate-Source Cutoff Voltage VDS = - 5.0 V, VGS = - 10 V 3.0 nA
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current*
Drain-Source On Resistance
V
= 5.0 V, ID = 1.0 µA
DS
= 15 V, IGS = 0
V
DS
≤ 0.1 V, VGS = 0
V
DS
105
106
107
105
106
107
105
106
107
- 4.5
- 2.0
- 0.5
500
200
100
- 10
- 6.0
- 4.5
mA
mA
mA
3.0
6.0
8.0
nA
nA
V
V
V
Ω
Ω
Ω
J105 / J106 / J107 / JFTJ105
SMALL SIGNAL CHARACTERISTICS
C
dg(on)
C
sg(on)
C
dg(off)
C
sg(off)
*
Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 35 pF
Source-Gate Off Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 35 pF
T ypical Characteristics
Common Drain-Source
Characteristics
200
150
100
50
D
I - DRAIN CURRENT (mA)
0
V = 0 V
GS
00.511.52
V - DRAIN-SOURCE VOLTAGE(V)
DS
-1V
-2V
-3V
-4V
-5V
T = + 25 C
A
TYP V = -5V
GS(OFF)
VDS = 0, VGS = 10 V, f = 1.0 MHz 160 pF
Common Drain-Source
Characteristics
50
V = 0 V
GS
40
30
20
0
10
D
I - DRAIN CURRENT (mA)
0
012345
V - DRAIN-SOURCE VOLTAGE(V)
DS
- 0.1V
- 0.2V
- 0.3V
-0.4V
- 0.5V
TYP V = -0.7V
T = + 25 C
A
GS(OFF)
0
Typical Characteristics (continued)
J105 / J106 / J107 / JFTJ105
N-Channel Switch
(continued)
Parameter Interactions
200
Ω
r @ VDS=100MV, VGS = 0
DS
100
V @ VDS = 5.0V, ID =3nA
GS(OFF)
50
I
DSS
20
10
5
2
DS
r - DRAIN "ON" RESISTANCE ( )
1
0.1 0.2 0.3 0.5 1 2 3 5 10
V - GATE CUT OFF VOLTAGE (V)
GS
r
DS
2,000
1,000
500
200
100
50
20
10
Normal ized Drain Resistance
vs Bias Voltage
20
V @5V, 10uA
GS(OFF)
r =
DSb
rDS
-------------- V
GS
1 - --------- V
GS(OFF)
10
5
1
DSb
0.5
r --- NORMALIZED RESISTANCE
0 0.2 0.4 0.6 0.8 1
V / V -- NORMALIZED GATE TO SOURCE VOLTAGE (V)
GS GS(OFF)
Capacitance vs Voltage
f=0.1-1.0MHz
C ( V = 5 V )
,5
EI
20
C ( V = 0 V )
,5
HI
10
5
D
I - DRAIN CURRENT (mA)
Cis (Crs) - CAPACITANCE (pf)
1
V - GATE-SOURCE VOLTAGE (V)
GS
-20-15-10-50
On Resistance vs
Drain Current
Ω
V = - 3.0V
GS(OFF)
20
0
10
DS
r - DRAIN "ON" RESISTANCE ( )
+125 C
5
1
1 2 3 5 10 20 30 50 100
0
+25 C
I - DRAIN CURRENT (mA)
D
+25 C
0
0
+125 C
0
- 55 C
V = - 5.0V
GS(OFF)
V = 0
GS
5
Output Conductance vs
Drain Cur rent
V DG = 5.0V
10V
5.0V
V
GS(OFF)
-4.0V
20
10
-2.0V
5
-1.0V
1
os
0.1 0.2 0.3 0.5 1 2 3 5 10
g - OUTPUT CONDUCTANCE (u mhos)
I - DRAIN CURRENT (mA)
D
15V
20V
10V
5.0V
15V
20V
10V
15V
20V
0
T = +25 C
A
f = 1.0 K Hz
Transconductance vs
Drain Current
V DG = 10.0V
0
T = +25 C
A
f = 1.0 k Hz
20
10
5
fs
1
g - TRANSCONDUCTANCE (u mhos)
0.1 0.2 0.3 0.5 1 2 3 5 10
V = - 1.0V
GS(OFF)
V = - 3.0V
GS(OFF)
V = - 5.0V
GS(OFF)
I - DRAIN CURRENT (mA)
D
T = - 55 C
A
T = +25 C
A
T = +125 C
A
0
0
0
Typical Characteristics (continued)
J105 / J106 / J107 / JFTJ105
N-Channel Switch
(continued)
Noise Voltage vs
Frequency
20
V = 10 V
DG
Hz
BW = 6.0 Hz @ f = 10Hz, 100 Hz
= 0.2f @ f > 1.0 k Hz
15
10
I = 1 mA
5
en - NOISE VOLTAGE (nV/ )
0
0.01 0.03 0.1 0.3 1 3 10 30 100
D
I = 10 mA
D
f - FREQUENCY (k Hz)
Power Dissipation vs
Ambient Temperature
1
0.75
TO-92
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
SOT-223
TEMPERATURE ( C)
º
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