Fairchild Semiconductor HGT1N30N60A4D Datasheet

GATE

COLLECTOR

EMITTER

TAB

(ISOLATED)

HGT1N30N60A4D

Data Sheet December 2001

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25

o

C and 150

o

C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49345.

Ordering Information

PART NUMBER PACKAGE BRAND

HGT1N30N60A4D SOT-227 30N60A4D

NOTE: When ordering, use the entire part number.

Features

• 100kHz Operation At 390V, 20A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 58ns at T

• Low Conduction Loss

Symbol

C

G

E

Packaging

JEDEC STYLE SOT-227B

= 125

J

o

C

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

±

µ

±

µ

HGT1N30N60A4D

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Speciﬁed

C

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At T

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T

Power Dissipation Total at T

Power Dissipation Derating T

RMS Isolation Voltage, Any Terminal To Case, t = 1 (Min) . . . . . . . . . . . . . . . . . . . . . . . .V

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

o

= 110

C

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

o

= 150

J

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25

C

C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 150A at 600V

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 W/

C25

C110

CM

GES

GEM

D

ISOL

, T

J

STG

96 A

39 A

240 A

20 V

30 V

255 W

2500 V

-55 to 150

o

C

o

C

Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 N-m

Terminal Screw Torque 4mm Metric Screw Size

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.7 N-m

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Speciﬁcations

T

o

= 25

C, Unless Otherwise Speciﬁed

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV

Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V

Gate to Emitter Leakage Current I

CES

CE(SAT)

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V

On-State Gate Charge Q

Current Turn-On Delay Time t

Current Rise Time t

Current Turn-Off Delay Time t

Current Fall Time t

Turn-On Energy (Note 2) E

Turn-Off Energy (Note 3) E

Current Turn-On Delay Time t

Current Rise Time t

Current Turn-Off Delay Time t

Current Fall Time t

Turn-On Energy (Note 2) E

Turn-Off Energy (Note 3) E

Diode Forward Voltage V

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI

ON1

ON2

OFF

d(ON)I

rI

d(OFF)I

fI

ON1

ON2

OFF

EC

I

= 250 µ A, V

C

V

= 600V T

CE

I

= 30A,

C

V

= 15V

GE

I

= 250 µ A, V

C

V

= ± 20V - -

GE

= 150

J

L = 100 µ H, V

I

= 30A, V

C

I

= 30A,

C

V

= 300V

CE

IGBT and Diode at T I

= 30A,

CE

V

= 390V,

CE

V

= 15V,

GE

R

= 3 Ω,

G

L = 200 µ H, Test Circuit (Figure 24)

= 0V 600 - - V

GE

= 600V 4.5 5.2 7.0 V

CE

o

C, R

= 3 Ω , V

G

= 600V

CE

= 300V - 8.5 - V

CE

J

o

= 25

C - - 250

J

T

V

= 25

o

= 125

J

GE

C - - 2.8 mA

o

= 25

C - 1.8 2.7 V

o

= 125

C - 1.6 2.0 V

GE

= 15V,

150 - - A

= 15V - 225 270 nC

= 20V - 300 360 nC

o

C,

-25 - ns

-12 - ns

- 150 - ns

-38 - ns

- 280 -

250 nA

- 600 -

- 240 350

IGBT and Diode at T I

= 30A,

CE

V

CE

R

= 3 Ω,

G

= 390V, V

GE

= 15V,

L = 200 µ H, Test Circuit (Figure 24)

= 125

J

o

C,

-24 - ns

-11 - ns

- 180 200 ns

-5870ns

- 280 -

- 1000 1200

- 450 750

I

= 30A - 2.2 2.5 V

EC

A

J

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

7000

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

300 400200100 500 600

0

100

150

50

200

TJ=150oC, RG=3Ω,VGE= 15V, L = 100µH

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

, PEAK SHORT CIRCUIT CURRENT (A)

t

SC

, SHORT CIRCUIT WITHSTAND TIME (

µ

s)

10 11 12

15

10

16

300

500

900

t

SC

I

SC

800

13 14

4

6

8

12

14

18

200

400

600

700

VCE=

390V, R

G

=3Ω,TJ=

125

o

C

HGT1N30N60A4D

θ

Electrical Speciﬁcations

T

o

C, Unless Otherwise Speciﬁed (Continued)

= 25

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

rr

JC

I

= 30A, dI

EC

I

= 1A, dI

EC

/dt = 200A/ µ s - 40 55 ns

EC

/dt = 200A/ µ s - 30 42 ns

EC

IGBT - - 0.49

Diode - - 2.0

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T Figure 24.

3. Turn-Off Energy Loss (E at the point where the collector current equals zero (I of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

Typical Performance Curves Unless Otherwise Speciﬁed

100

V

= 15V

90

80

70

60

50

40

30

20

, DC COLLECTOR CURRENT (A)

CE

10

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

GE

o

C/W

o

C/W

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

ON2

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

300

100

f

=0.05/(t

MAX1

f

=(PD-PC)/(E

MAX2

P

= CONDUCTION DISSIPATION

C

(DUTY FACTOR = 50%)

R

=0.49oC/W, SEE NOTES

, OPERATING FREQUENCY (kHz)

MAX

f

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

ØJC

TJ= 125oC, RG=3Ω,L=200µH, VCE= 390V

10

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

EMITTER CURRENT

d(OFF)I+td(ON)I

ON2+EOFF

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

V

T

GE

C

o

15V

C

75

)

6010 30

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

Fairchild Semiconductor HGT1N30N60A4D Datasheet

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