Fairchild Semiconductor GF1A, GF1K, GF1J, GF1G, GF1D Datasheet
...
GF1A - GF1M
Features
• Low forward voltage drop.
• High current capability.
• Easy pick and place.
• High surge current capability.
3.93
3.73
1.67
1.47
1.0 Ampere Glass Passivated Rectifier
+
2.38
2.18
5.49
5.29
Minimum Recommende d
Land Pattern
SMA/DO-214AC
COLOR BAND DENOTES CA THODE
0.062 (1.575)
0.055 (1.397)
0.060 (1.524)
0.030 (0.762)
GF1A-GF1M
0.181 (4.597)
0.157 (3.988)
2
0.208 (5.283)
0.188 (4.775)
0.008 (0.203)
0.002 (0.051)
0.114 (2.896)
1
0.098 (2.489)
0.096 (2.438)
0.078 (1.981)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
R
θ
JC
T
stg
T
J
Average Rectified Current
= 125°C
@ T
L
Peak Forward Surge Current
8.3 ms single hal f-sine-wave
Superimposed on rated l oad (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistanc e, Junction to Ambient ** 80
Thermal Resistance, Junction to Case ** 26
Storage Temperature Range -65 to +175
Operating Junction Temperature -65 to +175
1.0 A
30 A
2.0
13
mW/°C
°
C/W
°
C/W
W
°
C
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas.
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
1A 1B 1D 1G 1J 1K 1M
Peak Repetitive Reverse Vo ltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 280 420 560 800 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
T
= 125°C
A
Maximum Forward Voltage @ 1.0 A 1.0 1.2 V
Maximum Reverse Recove ry Time
I
= 0.5 A, IR = 1.0 A, I
F
= 0.25 A
rr
Typical Junction Capacitance
V
= 4.0 V, f = 1.0 MHz
R
50 100 200 400 600 800 1000 V
5.0
50
2.0
15 pF
A
µ
A
µ
S
µ
1998 Fairchild Semiconductor International
GF1A-GF1M, Rev. E
T ypical Characteristics
GF1A-GF1M
Surface Mount Glass Passivated Rectifier
(continued)
Forward Current Derating Curve
1.6
1.4
1.2
1
RESISTIVE OR
0.8
INDUCTIVE LOAD
P.C.B. MOUN T ED
0.6
ON 0.2 x 0.2 "
(5.0 x 5.0 m m)
0.4
COPPE R PAD AREAS
FORWARD CURRE NT (A)
0.2
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE ( C)
º
Forward Charact eristics
100
10
1
0.1
FORWARD CURRE NT (A)
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
T = 25 C
º
A
Pulse Width = 300µS
2% Duty Cycle
FORWARD VOL TAGE (V)
Non-Repetitive Surge Current
100
50
20
10
5
2
1
PEAK FORWARD SURGE CURRENT (A)
1 2 5 10 20 50 100
NUMBER OF CYCLES AT 60Hz
Reverse Characteris tics
100
10
µ
1
0.1
0.01
REVERSE CURRENT ( A)
0.001
0 20406080100120140
PERCENT OF RATED PEA K REVERSE VOL TAGE (%)
T = 125 C
º
A
º
T = 75 C
A
T = 25 C
º
A
Typical Junction Capacitance
100
50
20
10
5
2
JUNCTIO N CAPACIT A NCE (pF)
1
0.01 0.1 1 10 100
REVERSE VOLTAGE (V)
GF1A-GF1M, Rev. E
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