Fairchild Semiconductor FDP7042L, FDB7042L Datasheet

FDP7042L / FDB7042L

N-Channel Logic Level PowerTrench



MOSFET

FDP7042L / FDB7042L

June 2000

PRELIMINARY

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low R

DS(ON)

.

Applications

• Synchronous rectifier

• DC/DC converter

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings T

S

=25oC unless otherwise noted

A

Features

• 50 A, 30 V. R

• Critical DC electrical parameters specified at

elevated temperature

• High performance trench technology for extremely

low R

DS(ON)

• 175°C maximum junction temperature rating

D

= 9 mΩ @ VGS = 4.5 V

DS(ON)

= 7.5 mΩ @ VGS = 10 V

R

DS(ON)

G

D

TO-263AB

FDB Series

S

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 30 V

Gate-Source Voltage

Drain Current – Continuous (Note 1) 50 A

– Pulsed (Note 1) 150

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range -65 to +175

± 12

83 W

0.48

W°C

V

°C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case 1.8

Thermal Resistance, Junction-to-Ambient 62.5

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB7042L FDB7042L 13’’ 24mm 800 units

FDP7042L FDP7042L Tube n/a 45

2000 Fairchild Semiconductor Corporati on

°C/W

FDP7042L Rev B(W)

FDP7042L / FDB7042L

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BVDSS ===∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1

Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA

30 V

24

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th) ===∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

= VGS, ID = 250 µA

V

DS

I

= 250 µA, Referenced to 25°C

D

Static Drain–Source On–Resistance VGS = 4.5 V, ID = 25A

= 10 V, ID = 25A

V

GS

= 4.5 V, ID =25A, TJ=125°C

V

GS

On–State Drain Current VGS = 4.5 V, VDS = 10 V 60 A

Forward Transconductance VDS = 5V, ID = 25 A 117 S

0.8 1.2 2 V

–4.1

6.2

5.5

9.6

7.5 16

mV/°C

9

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 2418 pF

V

= 15 V, V

Output Capacitance 549 pF

Reverse Transfer Capacitance

DS

f = 1.0 MHz

GS

= 0 V,

243 pF

Switching Characteristics (Note 2)

t

Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 21 34 ns

Turn–On Rise Time 20 32 ns

Turn–Off Delay Time 60 96 ns

Turn–Off Fall Time

V

= 15 V, ID = 1 A,

DD

= 4.5 V, R

V

GS

GEN

= 6 Ω

30 48 ns

Total Gate Charge 32 51 nC

V

= 15 V, ID = 50 A,

Gate–Source Charge 10 nC

Gate–Drain Charge

DS

V

GS

= 4.5 V

9nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. Maximum continuous current is limited by the package.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Maximum Continuous Drain–Source Diode Forward Current 50 A Drain–Source Diode Forward

Voltage

V

= 0 V, IS = 25 A (Note 2) 0.8 1.3 V

GS

µA

FDP7042L Rev B(W)

Typical Characteristics

FDP7042L / FDB7042L

150

VGS = 4.5V

120

90

60

30

0

012345

3.5V

3.0V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

2.5V

2

1.8 VGS = 2.5V

1.6

1.4

1.2

1

0.8

0 30 60 90 120 150

3.0V

, DRAIN CURR ENT (A)

I

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2

ID =25A

1.8 = 4.5V

V

GS

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEM PERATURE (oC)

J

0.025

0.02

0.015

0.01

0.005

TA = 25oC

0

22.533.544.55

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

4.0V

4.5V

ID = 25 A

Figure 3. On-Resistance Variation

withTemperature.

80

VDS = 5V

60

40

20

0

11.522.53

TA = 125oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

-55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0 0.2 0.4 0.6 0.8 1 1.2 1.4

T

= 125oC

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP7042L Rev B(W)