Fairchild Semiconductor FDP5690, FDB5690 Datasheet
FDP5690/FDB5690
60V N-Channel PowerTrench
TM
MOSFET
FDP5690/FDB5690
July 2000
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
G
D
S
TO-220
FDP Series
Absolute Maximum Ratings T
DS(on)
G
= 25°C unless otherwise noted
C
Symbol Parameter
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 60 V
Gate-Source Voltage
Maximum Drain Current - Continuous 32 A
- Pulsed 100
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range -65 to +175
Features
• 32 A, 60 V. R
• Critical DC electrical parameters specified at evevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low
R
• 175°C maximum junction temperature rating.
DS(ON)
.
= 0.027 Ω @ VGS = 10 V
DS(ON)
R
= 0.032 Ω @ VGS = 6 V.
DS(ON)
D
D
G
S
TO-263AB
FDB Series
FDP5690 FDB5690
±
20
58 W
0.4
S
Units
V
W/°C
°
C
Thermal Characteristics
R
JC
θ
R
JA
θ
Thermal Resistance, Junction-to-Case 2.6
Thermal Resistance, Junction-to-Ambient 62.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDB5690 FDB5690 13’’ 24mm 800
FDP5690 FDP5690 Tube N/A 45
2000 Fairchild Semiconductor International
°
C/W
°
C/W
FDP5690/FDB5690 Rev. C
FDP5690/FDB5690
yp
(
)
Electrical Characteristics
Tc = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Drain-Source Avalanche Ratings
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Av al anche Current 32 A
(Note1)
VDD = 30 V, ID = 32A 80 mJ
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 5 V, ID = 16 A 32 S
(Note 1)
= 0 V, ID = 250 µA
V
GS
60
ID = 250 µA, Referenced to 25°C61mV/
V
= 20 V, VDS = 0 V 100
GS
V
= -20 V, VDS = 0 V -100
GS
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
V
= 10 V, ID = 16 A,
GS
V
= 10 V, ID = 16 A,TJ = 125°C
GS
V
= 6 V, ID = 15 A
GS
22.44 V
-6.4
0.021
0.042
0.024
Max Units
V
°
A
µ
nA
nA
mV/°C
0.027
0.055
0.032
Ω
C
Dynamic Characteristics
= 25 V, VGS = 0 V,
V
C
iss
C
oss
C
rss
Input Capacitance 1120 pF
Output Capacitance 160 pF
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 10 18 ns
Turn-On Rise Time 9 18 ns
Turn-Off Delay Time 24 39 ns
Turn-Off Fall Time
Total Gate Charge 23 33 nC
Gate-Source Charge 3.9 nC
Gate-Drain Charge
(Note 1)
DS
f = 1.0 MHz
= 30 V, ID = 1 A,
V
DD
V
= 10 V, R
GS
= 15 V,
V
DS
I
= 16 A, VGS = 10 V
D
GEN
= 6
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Note:
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
VGS = 0 V, IS = 16 A
(Note 1)
Voltage
Note 1
80 pF
10 18 ns
6.8 nC
32 A
0.92 1.2 V
FDP5690/FDB5690 Rev. C
T ypical Characteristics
C
FDP5690/FDB5690
80
VGS = 10V
70
7.0V
60
50
40
30
20
, DRAIN-SOURCE CURRENT (A)
D
10
I
0
0246810
6.0V
5.0V
4.5V
, DRAIN-SOURCE VOLTAGE (V)
V
DS
4.0V
2.2
2
VGS = 4.0V
1.8
1.6
1.4
, NORMALIZED
DS(ON)
1.2
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 20406080
4.5V
5.0V
6.0V
ID, DRAIN CURRENT (A)
7.0V
10V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation with
Drain Current and Gate Voltage.
2.2
ID = 16A
2
V
= 10V
GS
1.8
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
0.6
DRAIN-SOURCE ON-RESISTANCE
0.4
-50 -25 0 25 50 75 100 125 150 175
T
, JUNCTION TEMPERATURE (oC)
J
0.06
0.05
0.04
0.03
0.02
, ON-RESISTANCE (OHM)
DS(ON)
0.01
R
0
345678910
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = 125oC
TA = 25oC
ID = 16A
Figure 3. On-Resistance Variation
with Temperature.
60
VDS = 5V
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
23456
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
25oC
125oC
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
o
25oC
-55oC
Figure 6. Body Diode Forward V oltage
Variation with Source Current
and Temperature.
FDP5690/FDB5690 Rev. C
Typical Characteristics (continued)
FDP5690/FDB5690
10
ID = 16A
8
VDS = 10V
20V
30V
1600
1200
C
ISS
6
800
4
CAPACITANCE (pF)
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20 25
Q
, GATE CHARGE (nC)
g
400
0
0 102030405060
C
OSS
C
RSS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
1000
100
RDS(ON) LIMIT
10
DC
DRAIN CURRENT (A )
D
I
0.1
VGS = 10V
1
SINGLE PULSE
= 2.3oC/W
R
JC
θ
T
= 25oC
C
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
10s
1s
10ms
100ms
1ms
2500
SINGLE PULSE
R
θ
2000
JC
TA = 25oC
1500
1000
POWER (W)
500
0
0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (ms)
f = 1MHz
V
= 0 V
GS
= 2.6oC/W
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.05
0.02
0.01
D = 0.5
0.2
Single Pulse
t ,TIME (ms)
1
R (t) = r(t) * R
JC
θ
R = 2.6 °C/W
JC
θ
P(pk)
t
1
t
2
T - T = P * R (t)θJC
J
C
Duty Cycle, D = t /t
JC
θ
1
2
0.5
E
IV
T
0.3
C
0.2
FFE
E
D
0.1
LIZE
A
0.05
M
R
O
0.03
0.02
r(t), N
TRANSIENT THERMAL RESISTANCE
0.01
0.01 0.1 1 10 100 1000
Figure 11. T ransient Thermal Response Curve.
FDP5690/FDB5690 Rev. C
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figure 1.0
45 units per Tube
12 Tubes per Bag
530mm x 130mm x 83mm
2 bags per Box
Conduct ive Plastic Bag
Intermediate box
Packaging Description:
TO-220 parts are ship ped normally in tube. The tu be is
made of PVC plas tic treated wi th anti -stati c agent .These
tubes in s tandard opt ion are placed in side a di ssipativ e
plastic bag, barcode labeled, and placed inside a box
made of r ecy cl able cor rug ate d pape r. On e bo x c ont ain s
tw o ba gs m ax im um (se e fi g. 1. 0). A nd on e or se ver al o f
these boxes are placed ins ide a labeled shipp ing box
wh ic h c o m es in d i ff er en t s i zes de pe ndi ng o n th e nu m b er
of parts shipped. The ot her option co mes in bulk as
described in the Packagin g In fo rm atio n table. The un it s in
this op tion ar e placed inside a s mall box laid w ith antistatic bu bble sheet. These smaller box es are indiv idually
labeled and plac ed inside a lar ger box (see fig. 3.0).
These larger or int ermediate boxes then w ill be placed
finally ins ide a labeled ship ping box whic h st ill co mes in
diff erent sizes depending on the number of un i ts shipped.
TO-220 Packaging
Information: Figure 2.0
TO-220 Packaging Information
Packaging Option
Packaging type
Qty per Tube/Box
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Note/Comments
Stan dard
(no fl ow code )
Rail/Tube
45
530x130x83
1,080
1.4378
S62Z
BULK
114x102x51
1,500
1.4378
TO-220 bulk Packing
Configuration: Figure 3.0
FSCINT Label
300 units per
EO70 box
114mm x 102mm x 51mm
TO-220 Tube
Configuration: Figure 4.0
Note: All dim ensions are in in c hes
9852
9852
F
F
NDP4060L
NDP4060L
300
EO70 Immediate Box
9852
F
NDP4060L
9852
F
NDP4060L
9852
F
NDP4060L
9852
F
NDP4060L
Anti-static
Bubbl e Sheets
5 EO70 boxes per per
Interme d iate Box
9852
9852
F
NDP4060L
F
NDP4060L
20.000
+0.031
-0.065
F
NDP4060L
1080 units maximu m
quantity per box
FSCINT Label
0.123
+0.001
-0.003
9852
9852
F
NDP4060L
9852
F
NDP4060L
FSCINT Label sample
530mm x 130mm x 83mm
Intermediate box
FSCINT Label
0.450
9852
F
NDP4060L
±.030
0.800
FAIRCHILD SEMICONDUCTOR CORPORAT ION
LOT:
CBVK741B019
NSID:
FDP7060
D/C1:
SPEC REV:
D9842
1500 units maximu m
quantity per intermediate box
0.165
0.080
0.275
1.300
±.015
0.032
±.003
0.275
QA REV:
0.160
HTB:B
QTY:
1080
SPEC:
B2
(FSCINT)
August 1999, Rev. B
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