Fairchild Semiconductor FDP42AN15A0, FDB42AN15A0 Datasheet

FDP42AN15A0 / FDB42AN15A0

N-Channel PowerTrench® MOSFET
150V, 35A, 42mΩ

FDP42AN15A0 / FDB42AN15A0

September 2002

Features

•r

•Q

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82864

MOSFET Maximum Ratings T

= 36mΩ (Typ.), V

DS(ON)

(tot) = 33nC (Typ.), V

g

GATE

SOURCE

TO-263AB

FDB SERIES

= 10V, ID = 12A

GS

= 10V

GS

DRAIN

(FLANGE)

DRAIN

(FLANGE)

= 25°C unless otherwise noted

C

Applications

• DC/D C C onverter s an d Of f-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 24V and 48V Syst ems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotiv e Load Control

• Elec tr on ic Valve Train Sys tems

D

SOURCE

DRAIN

GATE

TO-220AB

FDP SERIES

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Curr e nt
Continuous (T

I

D

Continuous (T
Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 24

C

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 5 A

θJA

35 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 90 mJ
Power dissipation 150 W

o

Derate above 25

C1.00W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristi cs

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction to Case TO-220,TO-263 1.0
Thermal Resistance Junction to Ambient TO-220,TO-263 62
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

systems certification.

FDP42AN15A0 / FDB42AN15A0 Rev. C

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB42AN15A0 FDB42AN15A0 TO-263AB 330mm 24mm 800 units
FDP42AN15A0 FDP42AN15A0 TO-220AB Tube N/A 50 units

FDP42AN15A0 / FDB42AN15A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Volt ag e ID = 250µA, VGS = 0V 150 - - V

V

= 120V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 12A, VGS = 10V - 0.036 0.042

I

D

I

= 6A, VGS = 6V - 0.040 0.060

Drain to S ou r c e On Re si st ance

D

= 12A, VGS = 10V,

I

D

T

= 175oC

J

- 0.090 0.107

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitanc e - 225 - pF
Reverse Transfer Capacitance - 45 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 4.2 5.4 nC
Gate to Source Gate Charg e - 9.5 - nC
Gate Charge Threshold to Plateau - 5.3 - nC

V

DD

I

= 12A

D

I

= 1.0m A

g

= 75V

Gate to Drain “Miller” Charge - 6.9 - nC

- 2150 - pF

30 39 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 11 - ns
Rise Time - 19 - ns
Turn-Off D elay Time - 27 - ns
Fall Time - 23 - ns
Turn-Off Time - - 74 ns

(VGS = 10V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes:
1: Starting TJ = 25°C, L = 0.2mH, IAS = 30A.

©2002 Fairchild Semiconductor Corporation

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 12A, dISD/dt = 100A/µs- -82ns

Reverse Recovered Charge ISD = 12A, dISD/dt = 100A/µs - - 204 nC

- - 46 ns

V

= 75V, ID = 12A

DD

V

= 10V, RGS = 7.5Ω

GS

I

= 12A - - 1.2 5 V

SD

= 6A - - 1.0 V

I

SD

FDP42AN15A0 / FDB42AN15A0 Rev. C

FDP42AN15A0 / FDB42AN15A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

10

40

30

20

, DRAIN CURRENT (A)

D

10

I

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-1

10

θJC

10

x R

0

t

1

t

2

2

+ T

θJC

C

1

10

500

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

-5

10

©2002 Fairchild Semiconductor Corporation

Figure 3. Normalized Maximum Transient Thermal Impedance

TC = 25oC
FOR TEMPERATURES

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

175 - T

25

10

FDP42AN15A0 / FDB42AN15A0 Rev. C

C

150

0

10

1

FDP42AN15A0 / FDB42AN15A0

Typical Characteristics T

200

100

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

SINGLE PULSE
TJ = MAX RATED

TC = 25oC

0.1
1 10 100 300

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

10µs

100µs

DC

Figure 5. Forward Bias Safe Operating Area

80

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V

= 15V

DD

60

1ms

10ms

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.001 0.01 0.1 1 10

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

80

VGS = 20V

60

VGS = 10V

VGS = 6V

40

TJ = 25oC

, DRAIN CURRENT (A)

D

I

20

0

345678

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

40

, DRAIN CURRENT (A)

D

I

20

PULSE DURATION = 80µs

0

012345

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

50

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

45

40

DRAIN TO SOURCE ON RESISTANCE(mΩ)

35

0 10203040

ID, DRAIN CURRENT (A)

VGS = 6V

VGS = 10V

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

TC = 25oC

VGS = 10V, ID =12A

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

©2002 Fairchild Semiconductor Corporation

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDP42AN15A0 / FDB42AN15A0 Rev. C