Fairchild Semiconductor FDP4020P, FDB4020P Datasheet
February 1999
PRELIMINARY
FDP4020P/FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect T ransistor
FDP4020P
General Description
This P-Channel low threshold MOSFET has been
designed for use as a linear pass element for low voltage
outputs. In addition, the part may be used as a low voltage
load switch when switching outputs on or off for power
management.The part may also be used in conjunction
with DC-DC converters requiring P-Channel.
Features
• -16 A, -20 V. R
R
• Critical DC electrical parameters specified at elevated
temperature.
• High density cell design for extremely low R
• TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
• 175°C maximum junction temperature rating.
= 0.08 Ω @ VGS = -4.5 V
DS(on)
= 0.11 Ω @ VGS = -2.5 V.
DS(on)
G
DS(on)
S
D
.
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Symbol Parameter
V
DSS
V
GSS
I
D
D
T
, T
J
STG
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous -16 A
- Pulsed -48
Total Power Dissipation @ TC = 25°C 37.5 WP
Derate above 25°C0.25W/
Operating and Storage Junction Temperature Range -65 to +175
Thermal Characteristics
R
JC
θ
R
JA
θ
Thermal Resistance, Junction-to- Case 4
Thermal Resistance, Junction-to- Ambient
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDP4020P FDP4020P 13’’ 12mm 2500 units
1999 Fairchild Semiconductor Corporation
(Note 1)
FDP4020P FDB4020P
8V
±
62.5 40
Units
C
°
C
°
C/W
°
C/W
°
FDP4020P Rev. A
FDP4020P
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
DSS
BV
∆
T
J
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
J
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown
VGS = 0 V, ID = -250 µA-20 V
Voltage
Breakdown Voltage
ID = -250 µA, Referenced to 25°C-28 mV/
Temperature Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current,
VGS = 8 V, VDS = 0 V 100 nA
µ
Forward
Gate-Body Leakage Current,
VGS = -8 V, VDS = 0 V -100 nA
Reverse
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.58 -1 V
Gate Threshold Voltage
ID = -250 µA, Referenced to 25°C2 mV/
Temperature Coefficient
Static Drain-Source
On-Resistance
VGS = -4.5 V,ID = -8 A,
V
= -4.5 V,ID = -8 A,TJ=125°C
GS
= -2.5 V,ID = -7 A
V
GS
0.068
0.098
0.096
0.08
0.13
0.110
On-State Drain Current VGS = -4.5 V, VDS = -5 V -20 A
Forward Transconductance VDS = -5 V, ID = -8 A 14 S
A
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 665 pF
Output Capacitance 270 pF
Reverse Transfer Capacitance
= -10 V, VGS = 0 V,
V
DS
f = 1.0 MHz
70 pF
C
°
C
°
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 8 16 ns
Turn-On Rise Time 24 38 ns
Turn-Off Delay Time 50 80 ns
Turn-Off Fall Time
Total Gate Charge 9.5 13 nC
Gate-Source Charge 1.3 nC
Gate-Drain Charge
= -5 V, ID = -1 A,
V
DD
V
= -4.5 V, R
GS
= -5 V,
V
DS
I
= -16 A, VGS = -4.5 V
D
GEN
= 6
Ω
29 45 ns
2.2 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
VGS = 0 V, IS = -16 A
Voltage
Notes:
1. R
is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad
θJA
of 2 oz. copper.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
(Note 2)
(Note 2)
(Note 2)
-16 A
-48
-1.2 V
FDP4020P Rev. A
T ypical Characteristics
FDP4020P
40
32
24
16
, DRAIN CURRENT (A)
D
-I
8
0
0246810
VGS = -4.5V
-4.0V
-3.5V
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
-3.0V
-2.5V
-2.0V
2
1.8
VGS = -2.0V
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 5 10 15 20 25 30
-2.5V
-3.0V
-I
, DIRAIN CURRENT (A)
D
-3.5V
-4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation
with Drain Current and Gate V oltage.
1.8
ID = -16A
VGS = -4.5V
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
T
, JUNCTION TEMPERATURE (oC)
J
0.2
0.16
0.12
0.08
, ON-RESISTANCE (OHM)
0.04
DS(ON)
R
0
1.522.533.544.55
-V
, GATE TO SOURCE VOLTAGE (V )
GS
-4.5V
ID = -8A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
with Temperature.
20
VDS = -5V
16
12
8
, DRAIN CURRENT (A)
D
-I
4
0
00.511.522.533.54
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
25oC
125oC
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
1
TA = 125oC
25oC
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.4 0.8 1.2 1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-55oC
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP4020P Rev. A
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