Fairchild Semiconductor FDN361AN Datasheet
FDN361AN
FDN361AN, Rev. C
FDN361AN
N-Channel, Logic Level, PowerTrench
ΤΜΤΜ
ΤΜΤΜ
ΤΜ
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
April 1999
Features
• 1.8 A, 30 V. R
DS(on)
= 0.100 Ω @ V
GS
= 10 V
R
DS(on)
= 0.150 Ω @ V
GS
= 4.5 V.
• Low gate charge ( 2.1nC typical ).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(on)
.
• High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with
30% higher power handling capability.
1998 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter FDN361AN Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage - Continuous
±
20 V
I
D
Drain Current - Continuous
(
Note 1a
)
1.8 A
- Pulsed 8
P
D
Power Dissipation for Single Operation
(
Note 1a
)
0.5
(
Note 1b
)
0.46
W
TJ, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°
C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
361 FDN361AN 7’’ 8mm 3000 units
Applications
• DC/DC converter
• Load switch
• Motor drives
D
S
G
G
D
S
SuperSOT -3
TM
FDN361AN
FDN361AN, Rev. C
DMOS Electrical Characteristics T
A
= 25°C unless otherwise noted
BV
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C24mV/
°
C
I
DSS
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
µ
A
I
GSSF
Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
I
GSSR
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
V
GS(th)
Gate Threshold Voltage VDS = VGS, ID = 250 µA11.83V
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C-4.2mV/
°
C
0.072
0.107
R
DS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.8 A
V
GS
= 10 V, ID = 1.8 A, TJ = 125°C
V
GS
= 4.5 V, ID = 1.4 A
0.105
0.1
0.16
0.15
Ω
I
D(on)
On-State Drain Current VGS = 10 V, VDS = 5 V 8 A
g
FS
Forward Transconductance VDS = 10 V, ID = 1.8 A 5 S
C
iss
Input Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz 220 pF
C
oss
Output Capacitance 50 pF
C
rss
Reverse Transfer Capacitance 20 pF
t
d(on)
Turn-On Delay Time VDD = 15 V, ID = 1 A, 3 6 ns
t Turn-On Rise Time VGS = 10 V, R
GEN
= 6.0
Ω
11 22 ns
t
d(off)
Turn-Off Delay Time 7 14 ns
t
f
Turn-Off Fall Time 3 6 ns
Q
g
Total Gate Charge VDS = 15 V, ID = 1.8 A, 2.1 4 nC
Q
gs
Gate-Source Charge VGS = 5 V 0.8 nC
Q
gd
Gate-Drain Charge 0.7 nC
I
S
Maximum Continuous Drain-Source Diode Forward Current 0.42 A
V
SD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 0.42 A
(Note 2)
0.75 1.2 V
Dynamic Characteristics
Switching Characteristics (Note 2)
Off Characteristics
On Characteristics (Note 2)
Drain-Source Diode Characteristics and Maximum Ratings
Symbol Parameter Test Conditions Min Typ Max Units
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
a) 250°C/W when mounted
on a 0.02 in2 pad of 2 oz. Cu.
b) 270°C/W when mounted
on a mininum pad.
FDN361AN
FDN361AN, Rev. C
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Typical Characteristics (continued)
0246810
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A )
DRAIN-SOURCE O N-RESISTANCE
V = 3. 5V
GS
5.0V
7.0V
4.5V
D
10V
4.0V
R , N OR MALI ZED
DS( ON )
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERAT URE (°C)
DRAIN-SO URCE ON-RES ISTANCE
J
V = 10 V
GS
I = 1.8 A
D
R , NORM ALI ZED
DS(ON)
246810
0
0. 05
0. 1
0. 15
0. 2
0. 25
0. 3
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
T = 25°C
A
I = 0.9A
D
T = 125°C
A
0.2 0.4 0.6 0.8 1 1.2
0.001
0. 0 1
0.1
1
10
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
-55°C
V = 0V
GS
SD
S
T = 125° C
J
25°C
12345
0
2
4
6
8
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V =5.0V
DS
GS
D
T = -55°C
J
25°C
125° C
00.511.522.53
0
2
4
6
8
V , DRAIN -SOURCE VOLTAGE (V )
I , DRAIN-SOURCE CURRENT (A)
V = 10V
GS
3.5V
3.0V
4.0V
6.0V
4.5V
DS
D
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