Fairchild Semiconductor FDN342P Datasheet
FDN342P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDN342P
August 1999
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages (2.5V - 12V).
Features
-2 A, -20 V. R
R
DS(ON)
DS(ON)
= 0.08 Ω @ V
= 0.13 Ω @ V
Rugged gate rating (±12V).
= -4.5 V
GS
= -2.5 V.
GS
High performance trench technology for extremely
Applications
Load switch
low R
Enhanced power SuperSOT
DS(ON)
.
TM-3
(SOT-23).
Battery protection
Power management
D
D
S
SuperSOT -3
TM
Absolute Maximum Ratings T
G
= 25°C unless otherwise noted
A
G
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) -2 A
- Pulsed -10
Power Dissipation for Single Operation (Note 1a) 0.5 W
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
S
±12
0.46
V
°C
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
Thermal Resistance, Junction-to-Case (Note 1) 75
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDN342P FDN342P 7’’ 8mm 3000 units
1999 Fairchild Semiconductor Corporation
°C/W
°C/W
FDN342P Rev. B
FDN342P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
V
= 0 V, ID = -250 µA
GS
= -250 µA,Referenced to 25°C
I
D
-20 V
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current,
VGS = 12 V, VDS = 0 V 100 nA
Forward
Gate-Body Leakage Current,
VGS = -12 V, VDS = 0 V -100 nA
Reverse
-16
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
= VGS, ID = -250 µA
V
DS
I
= -250 µA,Referenced to 25°C
D
VGS = -4.5 V, ID = -2 A
= -4.5 V, ID = -2 A,TJ=125°C
V
GS
V
= -2.5 V, ID = -1.5 A
GS
On-State Drain Current VGS = -4.5 V, VDS = -5 V -5 A
Forward Transconductance VDS = -5 V, ID = -5 A 7 S
-0.6 -1.05 -1.5 V
3
0.062
0.086
0.099
mV/°C
0.08
0.14
0.13
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 635 pF
Output Capacitance 175 pF
Reverse Transfer Capacitance
= -10 V, VGS = 0 V
V
DS
f = 1.0 MHz
75 pF
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Turn-On Delay Time 20 35 ns
Turn-On Rise Time 8 16 ns
Turn-Off Delay Time 9 18 ns
Turn-Off Fall Time
g
gs
gd
Total Gate Charge 6.3 9 nC
Gate-Source Charge 1.5 nC
Gate-Drain Charge
V
= -10 V, ID = -1 A
DD
= -4.5 V, R
V
GS
= -10 V, ID = -2 A
V
DS
= -4.5 V,
V
GS
GEN
= 6 Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θJA
surface of the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -0.42 A
Drain-Source Diode Forward
VGS = 0 V, IS = -0.42 A (Note 2) -0.7 -1.2 V
Voltage
is guaranteed by design while R
θJC
a) 250°C/W when mounted
on a 0.02 in2 pad of 2 oz. Cu.
is determined by the user's board design.
θCA
b) 270°C/W when mounted
on a mininum pad.
19 32 ns
1.7 nC
FDN342P Rev. B
Typical Characteristics
FDN342P
20
VGS = -4.5V
-4.0V
15
10
5
, DRAIN-SOURCE CURRENT (A)
D
-I
0
012345
-3.5V
-3.0V
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
-2.5V
-2.0V
2
1.8
VGS = -2.5V
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE O N-RE S IS TANCE
-3.0V
-3.5V
-4.0V
0.8
0 4 8 12 16 20
, DRAIN CURRENT (A)
- I
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
ID = -2.0A
V
= -4.5V
GS
1.4
1.2
1
, NORMALIZED
DS(ON)
R
0.8
DRAIN-SOURCE ON- RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMP E RATURE (oC)
J
0.3
0.2
0.1
, ON-RESISTANCE (OHM)
DS(ON)
R
0
12345
-V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = 125oC
TA = 25oC
-4.5V
ID = -1A
Figure 3. On-Resistance Variation
with Temperature.
8
VDS = -5V
6
4
, DRAIN CURRE NT (A)
D
2
-I
0
0.4 1.4 2.4 3.4
, GATE TO SOURCE VOLTAG E (V)
-V
GS
TA = -55oC
25oC
125oC
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V
SD
TA = 125oC
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN342P Rev. B
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