Fairchild Semiconductor FDN340P Datasheet

FDN340P

FDN340P

Single P-Channel , Logic Level, PowerTrench MOSFET

December 1999

General Description

This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.

These devices are well suited for portable electronics
applications: Load switching and power management,
battery charging circuits, and DC/DC conversion.

D

340

SuperSOT -3

TM

S

G

Features

–2 A, 20 V. R

• Low gate charge (8nC typical).

• High performance trench technology for extremely

low R

DS(ON)

.

• High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%

higher power handling capability.

= 0.07 Ω @ VGS = –4.5 V

DS(ON)

R

= 0.11 Ω @ VGS = –2.5 V.

DS(ON)

R

= 0.210 Ω @ VGS = –1.8 V.

DS(ON)

D

SG

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage –20 V
Gate-Source Voltage ±8 V
Drain Current – Continuous (Note 1a) –2 A

– Pulsed –10

Power Dissipation for Single Operation (Note 1a) 0.5

(Note 1b)

0.46

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 250
Thermal Resistance, Junction-to-Case (Note 1) 75

°C/W
°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

340 FDN340P 7’’ 8mm 3000 units

1999 Fairchild Semiconductor Corporation

FDN340P Rev C (W)

W

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

VGS = 0 V, ID = –250 µA
ID = –250 µA,Referenced to 25°C

–20 V

–15

VDS = –16 V, VGS = 0 V –1

TJ=55°C

–10

mV/°C

µA

On Characteristics (Note 2)

V

GS(th)

∆VGS( th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.9 –1.5 V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

ID = –250 µA,Referenced to 25°C
VGS = –4.5 V, ID = –2 A

TJ=125°C

VGS= –2.5 V, ID = –1.7A,

2.7 mV/°C

0.052 0.07

0.075 0.12

0.078 0.11

VGS= –1.8 V, ID = –1.2 A,
On–State Drain Current VGS = –4.5 V, VDS = –5 V –5 A
Forward Transconductance VDS = –4.5 V, ID = –2 A 8 S

0.21

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 600 pF
Output Capacitance 175 pF
Reverse Transfer Capacitance

VDS = –10 V, V

f = 1.0 MHz

GS

= 0 V,

80 pF

FDN340P

Ω

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)
r
d(off)
f

g
gs
gd

Turn–On Delay Time 6 12 ns
Turn–On Rise Time 9 18 ns

VDD = –5 V, ID = –0.5 A,

VGS = –4.5 V, R

GEN

= 6 Ω

Turn–Off Delay Time 31 50 ns
Turn–Off Fall Time
Total Gate Charge 8 11 nC
Gate–Source Charge 1.3 nC

VDS = –10 V, ID = –2 A,

VGS = –4.5 V
Gate–Drain Charge

26 42 ns

2.2 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Maximum Continuous Drain–Source Diode Forward Current –0.42 A
Drain–Source Diode Forward

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

a. 250°C/W when mounted on a

0.02in2 pad of 2 oz copper

is determined by the user's board design.

θCA

VGS = 0 V, IS = –0.42 A (Note ) –0.7 –1.2 V

b. 270°C/W when mounted on a
.001 in2 pad of 2 oz copper

FDN340P Rev C (W)

Typical Characteristics

FDN340P

10

8

V = -4.5V

GS

-3.5V

-3.0V

-2.5V

6

-2.0V

4

2

D

- I , DRAIN-SOURCE CURRENT (A)

0

0 0 1 1 2 2

-V , DRAIN-SOURCE VOLTAGE (V)

DS

2

1.8

V = -2.5 V

1.6

1.4

1.2

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.8

GS

-3.0V

-3.5V

1

0 2 4 6 8 10

- I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2

I = -2A

D

V = -4.5V

GS

1

1

1

DS(ON)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

1

1

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

0.2

0.16

0.12

0.08

0.04

DS(ON)

R , ON-RESISTANCE (OHM)

0

1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

GS

-4.0V

-4.5V

I = -1A

D

T = 125°C

A

25°C

Figure 3. On-Resistance Variation

withTemperature.

10

V = -5V

DS

8

6

4

D

- I , DRAIN CURRENT (A)

2

0

1 2 2 3 3

-V , GATE TO SOURCE VOLTAGE (V)
GS

T = -55°C

J

125°C

25°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

V = 0V

GS

1

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

T = 125°C

J

25°C

-55°C

-V , BODY DIODE FORWARD VOLTAGE (V)
SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDN340P Rev C (W)