Fairchild Semiconductor FDN336P Datasheet

November 1998

FDN336P
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description Features

This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.

These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

D

336

S

TM

SuperSOT -3

G

-1.3 A, -20 V. R
R

= 0.20 Ω @ V

DS(ON)

= 0.27 Ω @ VGS= -2.5 V.

DS(ON)

GS

= -4.5 V

Low gate charge (3.6 nC typical).
High performance trench technology for extremely low

R

.

DS(ON)

High power version of industry standard SOT-23 package.
Identical pin out to SOT-23 with 30% higher power handling
capability.

SO-8

SOT-223

D

G

SOIC-16

S

Absolute Maximum Ratings T

= 25oC unless other wise noted

A

Symbol Parameter FDN336P Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -20 V
Gate-Source Voltage ±8 V
Drain Current - Continuous -1.3 A

- Pulsed -10

P

D

Maximum Power Dissipation (Note 1a) 0.5 W
(Note 1b) 0.46

TJ,T

Operating and Storage Temperature Range -55 to +150 °C

STG

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

© 1998 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W

FDN336P Rev.C

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V
Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

ID = -250 µA, Referenced to 25 oC
VDS = -16 V, V

GS

= 0 V

-1 µA

TJ = 55°C
I
I

GSSF

GSSR

Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse

VGS = -8 V, V

DS

= 0 V

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V
Gate Threshold Voltage Temp. Coefficient

/∆T

J

Static Drain-Source On-Resistance

ID = -250 µA, Referenced to 25 oC
VGS = -4.5 V, ID = -1.3 A

TJ =125°C 0.18 0.32

VGS = -2.5 V, I D = -1.1 A
I
g

D(ON)

FS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -5 A
Forward Transconductance

VDS = -4.5 V, ID = -2 A

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -10 V, VGS = 0 V,
Output Capacitance 80 pF

f = 1.0 MHz

Reverse Transfer Capacitance 35 pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

t

r

t

D(off)

t

f

Q

g

Q

gs

Q

gd

Turn - On Delay Time
Turn - On Rise Time 12 22 ns

VDD = -5 V, ID = -0.5 A,

VGS = -4.5 V, R

GEN

= 6 Ω

Turn - Off Delay Time 16 26 ns
Turn - Off Fall Time 5 12 ns
Total Gate Charge
Gate-Source Charge 0.8 nC

VDS = -10 V, ID = - 2 A,

VGS = -4.5 V

Gate-Drain Charge 0.7 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Note:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

design while R

Maximum Continuous Drain-Source Diode Forward Current -0.42 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A

is determined by the user's board design.

CA

θ

(Note) -0.7 -1.2 V

-16

mV /o C

-10 µA

-100 nA

3

mV /oC

0.122 0.2

0.19 0.27

4 S

330 pF

7 15 ns

3.6 5 nC

is guaranteed by

JC

θ

Ω

o

a. 250

C/W when mounted on

a 0.02 in2 pad of 2oz Cu.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

o

b. 270

C/W when mounted on

2

a 0.001 in

pad of 2oz Cu.

FDN336P Rev.C