Fairchild Semiconductor FDN335N Datasheet

FDN335N

N-Channel 2.5V Specified PowerTrenchTM MOSFET

FDN335N

April 1999

General Description

This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.

Applications

• DC/DC converter

• Load switch

D

S

SuperSOT -3

TM

G

Features

• 1.7 A, 20 V. R

R

= 0.07 Ω @ V

DS(ON)

= 0.100 Ω @ V

DS(ON)

= 4.5 V

GS

= 2.5 V.

GS

• Low gate charge (3.5nC typical).

• High performance trench technology for extremely

low R

DS(ON)

.

• High power and current handling capability .

D

GS

Absolute Maximum Ratings

TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 20 V
Gate-Source Voltage

(Note 1a)

(Note 1a)
(Note 1b)

Drain Current - Continuous

- Pulsed 8

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range -55 to +150

8

±

1.7 A

0.5 W

0.46

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambi ent
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

250

75

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

335 FDN335N 7’’ 8mm 3000 units

1999 Fairchild Semiconductor Corporation

V

C

°

C/W

°

C/W

°

FDN335N Rev. C

FDN335N

Electrical Characteristics

Symbol

Off Characteristics

BV

DSS

DSS

BV

∆

T

J

∆

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1

Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse

On Characteristics

V

GS(th)

GS(th)

V

∆

T

J

∆

R

DS(ON)

I

D(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.9 1.5 V
Gate Threshold Voltage

Temperature Coefficient
Static Drain-Source

On-Resistance

On-State Drain Current VGS = 4.5 V, VDS = 5 V 8 A
Forward Transconductance VDS = 5 V, ID = 1.5 A 7 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 310 pF
Output Capacitance 80 pF
Reverse Transfer Capacitance

Parameter Test Conditions Min Typ Max Units

(Note 2)

TA = 25°C unless otherwise noted

ID = 250 µA,Referenced to 25°C14mV/

C

°

A

µ

VGS = 8 V, VDS = 0 V 100 nA

VGS = -8 V, VDS = 0 V -100 nA

ID = 250 µA,Referenced to 25°C-3mV/

VGS = 4.5 V, ID = 1.7 A
V

= 4.5 V, ID = 1.7 A,TJ = 125°C

GS

V

= 2.5 V, ID = 1.5 A

GS

V

= 10 V, VGS = 0 V,

DS

0.055

0.079

0.078

0.070

0.120

0.100

C

°

Ω

f = 1.0 MHz

40 pF

(Note 2)

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g

gs

gd

Turn-On Delay Time 5 15 ns
Turn-On Rise Time 8.5 17 ns
Turn-Off Delay Time 11 20 ns
Turn-Off Fall Time
Total Gate Charge 3.5 5 nC
Gate-Source Charge 0.55 nC
Gate-Drain Charge

V

= 10 V, ID = 1 A,

DD

V

= 4.5 V, R

GS

V

= 10 V, ID = 1.7 A,

DS

V

= 4.5 V,

GS

GEN

= 6

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1: R

θJA

surface of the drain pins. R

Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current 0.42 A
Drain-Source Diode Forward

VGS = 0 V, IS = 0.42 A

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

a) 250°C/W when

mounted on a 0.02 in
Pad of 2 oz. Cu.

is guaranteed by design while R

θJC

2

is determined by the user's board design.

θCA

b) 270°C/W when mounted
on a minimum pad.

Ω

(Note 2)

310ns

0.95 nC

0.7 1.2 V

FDN335N Rev. C

T ypical Characteristics

FDN335N

10

VGS = 4.5V

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

00.511.522.53

3.5V

3.0V

2.5V

2.0V

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

1.5V

Figure 1. On-Region Characteristics.

1.6
ID = 1.7A

V

= 4.5V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

2.2

VGS = 2.0V

2

1.8

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0246810

2.5V

3.0V

3.5V

, DRAIN CURRENT (A)

I

D

4.0V

4.5V

Figure 2. On-Resistance Variation

with Drain Current and Gate V oltage.

0.24

0.2

0.16

0.12

0.08

, ON-RESISTANCE (OHM)

DS(ON)

0.04

R

0

12345

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = 125oC

TA = 25oC

ID = 0.85A

Figure 3. On-Resistance Variation

with Temperature.

10

VDS = 5V

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

01234

V

GS

TA = -55oC

, GATE TO SOURCE VOLTAGE (V)

25oC

125oC

Figure 4. On-Resistance Variation

with Gate-to-Source V oltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDN335N Rev. C