Fairchild Semiconductor FDN304P Datasheet

FDN304P

P-Channel 1.8V Specified PowerTrench



MOSFET

FDN304P

June 2000

PRELIMINARY

General Description

This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.

Applications

• Battery management

• Load switch

• Battery protection

D

Features

• –2.4 A, –20 V. R

R

R

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOTTM -3 provides low R

power handling capability than SOT23 in the same

footprint

= 0.052 Ω @ VGS = –4.5 V

DS(ON)

= 0.070 Ω @ VGS = –2.5 V

DS(ON)

= 0.100 Ω @ VGS = –1.8 V

DS(ON)

and 30% higher

DS(ON)

D

S

G

SuperSOT -3

TM

Absolute Maximum Ratings T

G

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

D

TJ, T

STG

Drain-Source Voltage –20 V

Gate-Source Voltage

Drain Current – Continuous (Note 1a)

– Pulsed

Maximum Power Dissipation (Note 1a) 0.5P

(Note 1b)

Operating and Storage Junction Temperature Range -55 to +150

±8

–2.4

–10

0.46

S

V

A

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 250

Thermal Resistance, Junction-to-Case (Note 1) 75

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.304 FDN304P 7’’ 8mm 3000 units

2000 Fairchild Semiconductor Corporati on

°C/W

°C/W

FDN304P Rev B(W)

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BVDSS
===∆T
I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

V

= 0 V, ID = –250 µA

GS

I

= –250 µA,Referenced to 25°C

D

–20 V

–13

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
===∆T
R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = –250 µA

DS

I

= –250 µA,Referenced to 25°C

D

VGS = –4.5 V, ID = –2.4 A

= –2.5 V, ID = –2.0 A

V

GS

= –1.8V, ID = –1.8 A

V

GS

–0.4 –0.8 –1.5 V

3

0.036

0.047

0.065

On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A

Forward Transconductance VDS = –5 V, ID = –1.25 A 12 S

mV/°C

0.052

0.070

0.100

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1312 pF

Output Capacitance 240 pF

Reverse Transfer Capacitance

= –10 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

106 pF

Switching Characteristics (Note 2)

t

t

t

t

Q

Q

Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 15 27 ns

Turn–On Rise Time 15 27 ns

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 40 64 ns

Turn–Off Fall Time

Total Gate Charge 12 20 nC

Gate–Source Charge 2 nC

V

= –10 V, ID = –2.4 A,

DS

= –4.5 V

V

GS

Gate–Drain Charge

25 40 ns

2nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current –0.42 A

Drain–Source Diode Forward

VGS = 0 V, IS = –0.42 (Note 2) –0.6 –1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

µA

Ω

a) 250°C/W when mounted on a

2

0.02 in

pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0%

b) 270°C/W when mounted on a

minimum pad.

FDN304P Rev B(W)

Typical Characteristics

)

FDN304P

15

VGS = -4.5V

12

9

6

, DRAIN CURRENT (A

D

-I

3

0

-3.0V

00.511.522.5

-2.5V

-2.0V

-1.8V

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

-1.5V

4

3.5
VGS = -1.5V

3

2.5

2

1.5

1

0.5

03691215

-1.8V

-2.0V

-2.5V

-I

, DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5

ID = -2.4A

1.4
V

= -4.5V

GS

1.3

1.2

1.1

1

0.9

0.8

0.7

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATUR E (oC)

T

J

0.14

0.12

0.1

0.08

0.06

TA = 25oC

0.04

0.02

12345

-V

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

GS

-3.0V

-4.5V

ID = -1.2 A

Figure 3. On-Resistance Variation with

Temperature.

15

VDS = - 5V

12

9

6

3

0

0 0.5 1 1.5 2 2.5 3

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA =

25oC

-55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

0.0001

TA = 125oC

25oC

-55oC

0 0.2 0.4 0.6 0.8 1 1.2 1.4

, BODY DIODE FOR WARD VOLTAG E (V)

-V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDN304P Rev B(W)