Fairchild Semiconductor FDLL916, FDLL914B, FDLL914A, FDLL914, FDLL4448 Datasheet

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

DO-35

THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL

High Conductance Fast Diode

Sourced from Process D3.

LL-34

Discrete POWER & Signal

Technologies

COLOR BAND MARKING

DEVICE

FDLL914 BLACK BROWN
FDLL914A BLACK GRAY
FDLL914B BROWN BLACK
FDLL916 BLACK RED
FDLL916A BLACK WHITE
FDLL916B BROWN BROWN
FDLL4148 BLACK BROWN
FDLL4448 BROWN BLACK

1ST BAND 2ND BAND

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

W

IV

I

O

I

F

i

f

i

f(surge)

T

stg

T

J

Working Inverse Voltage 75 V
Average Rectified Current 200 mA
DC Forward Current 300 mA
Recurren t Peak Forward Current 400 mA
Peak Forward Surge Current

Pulse width = 1.0 second
Pulse width = 1.0 microsecond

Storage Temperature Range -65 to +200
Operating Junction Temperature 175

1.0

4.0

A
A

°
°

C
C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

1N/FDLL 914/A/B / 4148 / 4448

P

D

R

θ

JA

Total Dev ice Dissipation

Derate above 25°C

500

3.33

Thermal Resistan ce, Junction to Ambient 300

mW

mW/°C

C/W

°

ã 1997 Fairchild Semiconductor Corporation

µAµ

High Conductance Fast Diode

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

B

V

I

R

V

F

C

O

T

RR

Breakdown Voltage

I

= 100 µA

R

I

= 5.0 µA

R

Reverse Current VR = 20 V

= 20 V, TA = 150°C

V

R

V

= 75 V

R

Forward Voltage

1N914B / 4448

1N916B

1N914 / 916 / 4148

1N914A / 916A

1N916B

1N914B / 4448

I

= 5.0 mA

F

I

= 5.0 mA

F

I

= 10 mA

F

I

= 20 mA

F

I

= 30 mA

F

I

= 100 mA

F

Diode Capacitance

V

1N916/A/B / 4448
1N914/A/B / 4148

= 0, f = 1.0 MHz

R

= 0, f = 1.0 MHz

V

R

Reverse Recovery Time IF = 10 mA, VR = 6.0 V (60 mA),

I

= 1.0 mA, RL = 100

rr

Ω

100

75

620
630

25
50

5.0

720
730

mV
mV

1.0

1.0

1.0

1.0

2.0

4.0

4.0 nS

V
V

nA

A

V
V
V
V

pF
pF

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

Typical Characteristics

REVERSE VOLTAGE vs REVERSE CURRENT

BV - 1.0 to 100 uA

160

Ta= 25°C

150

140

130

120

R

R

V

V - REVERSE VOLTAGE (V)

110

1 2 3 5 10 20 30 50 100

FORWARD VOLTAGE vs FORWARD CURRENT

550

Ta= 25°C

500
450
400
350
300

F

V - FORWARD VOLTAGE (mV)

250

1 2 3 5 10 20 30 50 100

I - REVERSE CURRENT (uA)

R

VF - 1 to 100 uA

F

I - FORWARD CURRENT (uA)

REVERSE CURRENT vs REVERSE VOLTAGE

IR - 10 to 100 V

120

Ta= 25°C

100

80
60
40
20

0

R

I - REVERSE CURRENT (nA)

10 20 30 50 70 100

GENERAL RULE: The Reverse Cur rent of a diode will approxi m at el y

double for every ten (10) Degree C increase in Temperature

R

V - REVERSE VOLTAGE (V)

FORWARD VOLTAGE vs FORWARD CURRENT

VF - 0.1 to 100 mA

750

Ta= 2 5° C

700
650
600
550
500

F

V - FORWARD VOLTAGE (mV)

450

0.1 0.2 0.3 0.5 1 2 3 5 10

F

I - FORWARD CURRENT (mA)