Fairchild Semiconductor ES1C, ES1B, ES1D, ES1A Datasheet

ES1A - ES1D

ES1A - ES1D

Discrete POWER & Signal

Technologies

Features

• For surface mount applications.

• Glass passivated junction.

0.062 (1.575)

0.055 (1.397)

0.181 (4.597)

0.157 (3.988)

2

1

0.114 (2.896)

0.098 (2.489)

• Low profile package.

• Easy pick and place.

• Built-in strain relief.

• Superfast recovery times for

high efficiency.

SMA/DO-214AC

COLOR BAND DENOTES CATHODE

0.060 (1.524)

0.030 (0.762)

0.208 (5.283)

0.188 (4.775)

0.008 (0.203)

0.004 (0.102)

0.096 (2.438)

0.078 (1.981)

0.012 (0.305)

0.006 (0.152)

1.0 Ampere Superfast Rectifiers

Absolute Maximum Ratings* T

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

Average Rectified Current

= 120°C

@ T

A

Peak Forward Surge Current

8.3 ms single hal f-sine-wave
Superimposed on rat ed l oad (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient** 85
Thermal Resistance, Junction to Lead** 35
Storage Temperature Range -50 to +150
Operating Junction Temperature -50 to +150

= 25°C unless otherwise noted

A

1.0 A

30 A

1.47

11.76

W

mW/°C

°C/W
°C/W

°C

C

°

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

1A 1B 1C 1D

Peak Repetitive Reverse Voltage 50 100 150 200 V
Maximum RMS Voltage 35 70 105 140 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current

@ rated V

R

TA = 25°C
T

= 100°C

A

Maximum Rev erse Recovery Time

I

= 0.5 A, IR = 1.0 A, I

F

RR

= 0.25 A

Maximum Forward Voltage @ 1.0 A 0.92 V
Typical Junction Capacitance

V

= 4.0 V, f = 1.0 MHz

R

1999 Fairchild Semiconductor Corporation

50 100 150 200 V

5.0

100

15 nS

7.0 pF

A

µ

A

µ

ES1A-ES1D, Rev. A

T ypical Characteristics

ES1A - ES1D

Forward Current Derating Curve

1.5

1.25

1

0.75

RESISTIVE OR
INDUCTIVE LOAD
P.C . B. MO UN TE D

0.5

ON 0.2 x 0.2"
(5. 0 x 5.0 mm)
COPPER PAD AREAS

FORWARD CURRE NT (A)

0.25

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE ( C)

º

Non-Repetitive Surge Current

30

25

20

15

10

5

0

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBER OF CYC LES AT 60Hz

Forward Characteristics

10

1

0.1

0.01

FORWARD CURRENT (A)

0.001

0.4 0.6 0.8 1 1.2 1.4

T = 25 C

º

A

Pulse Width = 300µs
2% Duty Cycle

FORWARD VOLTAGE (V)

Reverse Characteristics

1000

µ

100

10

1

REVERSE CURRENT ( A)

0.1
0 20406080100120140

PERCENT OF RA TE D PEA K REVER SE VO LTAGE (%)

T = 125 C

º

A

T = 75 C

º

A

º

T = 25 C

A

14

12

10

8

6

4

CAPAC I TA NCE (p F )

2

0

0.1 1 10 100

50

Ω

NONINDUCTIVE

50V
(approx)

Ω

50
NONINDUCTIVE

NOTES:

1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.

2. Rise time = 10 ns max; Source impedance = 50 ohms.

Ω

50
NONINDUCTIVE

DUT

Pulse
Generator
(Note 2)

OSCILLOSCOPE
(Note 1)

(-)

(+)

Reverse Recovery Time Characterstic and Test Circuit Diagram

Junction Capacitance

REVERSE VOLTAGE (V)

-0.25A

+0.5A

trr

0

-1.0A

1.0cm SET TIME BASE FOR
5/ 10 ns/ cm

ES1A-ES1D, Rev. A