F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM 0.155 (3.94) MAX
1.00 (25.4)
MIN
ANODE (CASE)
0.100 (2.54)
0.050 (1.27)
1 3
0.040 (1.02)
0.040 (1.02) |
Ø0.020 (0.51) 2X |
45°
NOTES:
1.Dimensions for all drawings are in inches (mm).
2.Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
DESCRIPTION
The F5E series are 880nm LEDs in a wide angle, TO-46 package.
FEATURES
•Good optical to mechanical alignment
•Mechanically and wavelength matched to the TO-18 series phototransistor
•Hermetically sealed package
•High irradiance level
SCHEMATIC
3
ANODE (Connected
To Case)
CATHODE 
1
1.Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2.Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3.RMA flux is recommended.
4.Methanol or isopropyl alcohols are recommended as cleaning agents.
5.Soldering iron tip 1/16” (1.6mm) minimum from housing.
6.As long as leads are not under any stress or spring tension
7.Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
|
Parameter |
Symbol |
Rating |
Unit |
|
|
Operating Temperature |
TOPR |
-65 to +125 |
°C |
|
|
Storage Temperature |
TSTG |
-65 to +150 |
°C |
|
|
Soldering Temperature (Iron)(3,4,5 and 6) |
TSOL-I |
240 for 5 sec |
°C |
|
|
Soldering Temperature (Flow)(3,4 and 6) |
TSOL-F |
260 for 10 sec |
°C |
|
|
Continuous Forward Current |
IF |
100 |
mA |
|
|
Forward Current (pw, 10µs; 100Hz) |
IF |
3 |
A |
|
|
Forward Current (pw, 1µs; 200Hz) |
IF |
10 |
A |
|
|
Reverse Voltage |
VR |
3 |
V |
|
|
Power Dissipation (TA = 25°C)(1) |
PD |
170 |
mW |
|
|
Power Dissipation (TC = 25°C)(2) |
PD |
1.3 |
W |
|
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
|
PARAMETER |
TEST CONDITIONS |
SYMBOL |
MIN |
TYP |
MAX |
UNITS |
|
|
Peak Emission Wavelength |
IF = 100 mA |
"PE |
— |
880 |
— |
nm |
|
|
Emission Angle at 1/2 Power |
|
# |
— |
±40 |
— |
Deg. |
|
|
Forward Voltage |
IF = 100 mA |
VF |
— |
— |
1.7 |
V |
|
|
Reverse Leakage Current |
VR = 3 V |
IR |
— |
— |
10 |
µA |
|
|
Total Power F5E1 (7) |
IF = 100 mA |
PO |
12.0 |
— |
— |
mW |
|
|
Total Power F5E2 (7) |
IF = 100 mA |
PO |
9.0 |
— |
— |
mW |
|
|
Total Power F5E3 (7) |
IF = 100 mA |
PO |
10.5 |
— |
— |
mW |
|
|
Rise Time 0-90% of output |
|
tr |
— |
1.5 |
— |
µs |
|
|
Fall Time 100-10% of output |
|
tf |
— |
1.5 |
— |
µs |
|
2001 Fairchild Semiconductor Corporation |
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DS300287 4/25/01 |
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1 OF 3 |
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www.fairchildsemi.com |
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