Fairchild Semiconductor EGP30J, EGP30G, EGP30A, EGP30F, EGP30K Datasheet

EGP30A - EGP30K

EGP30A-EGP30K

Discrete POWER & Signal

Technologies

Features

1.0 min(25.4)

•Glass passivated cavity-free junction.

•High surge current capability.

•Low leakage current.

0.375(9.53)

0.285(7.24)

•Superfast recovery time for high

efficiency.

•Low forward voltage, high current

capability.

DO-201AD

COLOR BAND DENOTES CATHODE

Dimensions in inches (mm)

0.210(5.33)

0.190(4.83)

0.052(1.32)

0.048(1.22)

3.0 Ampere Glass Passivated High Efficiency Rectifiers

Absolute Maximum Ratings* T

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Average Rectified Current

.375 " lead length @ T

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC meth od)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient 20
Thermal Resistance, Junction to Lead 8.5
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +150

= 25°C unless otherwise noted

A

= 55°C

A

3.0 A

125

6.25
50

mW/°C

C/W

°

C/W

°

A

W

C

°

C

°

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

30A 30B 30C 30D 30F 30G 30J 30K

Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR)

Maximum Reverse Current

@ rated V

R TA

T

A

= 25°C

= 125°C
Maximum Reverse Recovery Time
I

= 0.5 A, IR = 1.0 A, I

F

= 0.25 A

rr

Maximum Forward Voltage @ 3.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance

V

= 4.0 V, f = 1.0 MHz

R

1999 Fairchild Semiconductor Corporation

50 100 150 200 300 400 600 800 V

5.0

100

50 75 nS

95 75 pF

EGP30A - EGP30K, Rev. A

µA
µA

T ypical Characteristics

EGP30A-EGP30K

Forward Current Derating Curve

3

2

SINGLE PHASE
HALF WAVE

1

60HZ
RESISTIVE OR
INDUCTIVE LOAD

FORWARD CU RRENT (A)

.375" (9.0 mm ) LEAD
LENGTHS

0

0 25 50 75 100 125 150 175

AMBI ENT TE MPERATURE ( C)

º

Forward Characteristics

50

EGP30A-EGP30D

10

T = 25 C

º

T = 150 C

A

1

0.1

FORWARD CURRENT (A)

0.01

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

EGP30F-EGP30K

Pulse Width = 300µs
2% Duty Cycle

FORWARD VOLTAGE (V)

º

A

Non-Repetitive Surge Current

175

150

125

100

75

50

25

0

PEAK FORWAR D SURGE CURRENT (A)

12 51020 50100

NUMBER OF CYCLES AT 60Hz

Reverse Charact eri stics

100

10

µ

1

0.1

0.01

REVERSE CURRENT ( A)

0.001

PERCENT OF RATED PEAK REVERSE VOL TAGE (%)

T = 150 C

º

A

T = 125 C

º

A

T = 75 C

º

A

º

T = 25 C

A

0 20 40 60 80 100 120 140

Junction Capacitance

210

180

150

120

90

EGP30F-EGP30K

60

CAPA C I TANC E ( p F )

30

0

0.1 1 10 100 1000

REVERSE VOLTAGE (V)

50

Ω

NONINDUCTIVE

50V
(approx)

50

Ω

NONINDUCTIVE

NOTES:

1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.

2. Rise time = 10 ns max; Source impedance = 50 ohms.

Ω

50
NONINDUCTIVE

DUT

Pulse
Generator
(Note 2)

OSCILLOSCOPE
(Note 1)

(-)

(+)

Reverse Recovery Time Characterstic and Test Circuit Diagram

EGP30A-EGP30D

+0.5A

0

-0.25A

-1.0A

1.0cm SET TIME BASE FOR

trr

5/ 10 ns/ cm

EGP30A - EGP30K, Rev. A