Fairchild Semiconductor EGP20K, EGP20D, EGP20C, EGP20J, EGP20G Datasheet
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Discrete POWER & Signal
Technologies
EGP20A - EGP20K
Features
•Glass passivated cavity-free junction.
•High surge current capability.
•Low leakage current.
•Superfast recovery time for high
efficiency.
•Low forward voltage, high current
capability.
COLOR BAND DENOTES CATHODE
DO-15
2.0 Ampere Glass Passivated High Efficiency Rectifiers
1.0 min(25.4)
Dimensions in
inches (mm)
0.300(7.62)
0.230(5.84)
0.140(3.56)
0.104(2.64)
0.034(0.86)
0.028(0.71)
EGP20A-EGP20K
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
R
θ
JL
T
stg
T
J
Average Rectified Current
.375 " lead length @ T
= 55°C
A
2.0 A
Peak Forward Surge Current
8.3 ms single half-sine-wave
75 A
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
3.13
25
mW/°C
Thermal Resistance, Junction to Ambient 40
Thermal Resistance, Junction to Lead 15
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +150
C/W
°
C/W
°
W
C
°
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
20A 20B 20C 20D 20F 20G 20J 20K
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R TA
= 25°C
= 125°C
T
A
Maximum Reverse Recovery Time
= 0.5 A, IR = 1.0 A, I
I
F
= 0.25 A
rr
Maximum Forward Voltage @ 2.0 A 0.95 1. 25 1.7 V
Typical Junction Capacitance
V
= 4.0 V, f = 1.0 MHz
R
50 100 150 200 300 400 600 800 V
5.0
100
50 75 nS
70 45 pF
µA
µA
1999 Fairchild Semiconductor Corporation
EGP20A - EGP20K, Rev. A
T ypical Characteristics
EGP20A-EGP20K
Forward Current Derating Curve
3
2
SINGLE PHASE
HALF WAVE
1
60HZ
RESISTIVE OR
INDUCTIVE LOAD
FORWARD CURRENT (A)
.375" (9.0mm) LEAD
LENGTHS
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
º
Forward Characteri stics
50
EGP20A-EGP20D
10
T = 25 C
º
T = 150 C
A
1
0.1
FORWARD CURRENT (A)
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
EGP20F-EGP20K
Pulse Width = 300µs
2% Duty Cycle
º
A
Non-Repetitive Surge Current
90
75
60
45
30
15
0
PEAK FORWARD SURGE CURRENT (A)
12 51020 50100
NUMBER O F CYCLES A T 60 Hz
Reverse Characteris tics
100
T = 150 C
º
10
µ
1
0.1
0.01
REVERSE CURRENT ( A)
0.001
PERCE NT OF RATED PEAK RE VERSE VOLTAGE (%)
A
T = 125 C
º
A
T = 75 C
º
A
º
T = 25 C
A
0 20406080100120140
140
120
100
80
60
EGP20F-EGP20K
40
CAPACITANCE (pF)
20
0
0.1 1 10 100 1000
50
Ω
NONINDUCTIVE
50V
(approx)
Ω
50
NONINDUCTIVE
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Ω
50
NONINDUCTIVE
DUT
Pulse
Generator
(Note 2)
OSCILLOSCOPE
(Note 1)
(-)
(+)
Reverse Recovery Time Characterstic and Test Circuit Diagram
Juncti o n C apacitan c e
EGP20A-EGP20D
REVERSE VOLTAGE (V)
+0.5A
trr
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR
5/ 10 ns/ cm
EGP20A - EGP20K, Rev. A
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