
Discrete POWER & Signal
Technologies
EGP20A - EGP20K
Features
•Glass passivated cavity-free junction.
•High surge current capability.
•Low leakage current.
•Superfast recovery time for high
efficiency.
•Low forward voltage, high current
capability.
COLOR BAND DENOTES CATHODE
DO-15
2.0 Ampere Glass Passivated High Efficiency Rectifiers
1.0 min(25.4)
Dimensions in
inches (mm)
0.300(7.62)
0.230(5.84)
0.140(3.56)
0.104(2.64)
0.034(0.86)
0.028(0.71)
EGP20A-EGP20K
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
R
θ
JL
T
stg
T
J
Average Rectified Current
.375 " lead length @ T
= 55°C
A
2.0 A
Peak Forward Surge Current
8.3 ms single half-sine-wave
75 A
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
3.13
25
mW/°C
Thermal Resistance, Junction to Ambient 40
Thermal Resistance, Junction to Lead 15
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +150
C/W
°
C/W
°
W
C
°
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
20A 20B 20C 20D 20F 20G 20J 20K
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R TA
= 25°C
= 125°C
T
A
Maximum Reverse Recovery Time
= 0.5 A, IR = 1.0 A, I
I
F
= 0.25 A
rr
Maximum Forward Voltage @ 2.0 A 0.95 1. 25 1.7 V
Typical Junction Capacitance
V
= 4.0 V, f = 1.0 MHz
R
50 100 150 200 300 400 600 800 V
5.0
100
50 75 nS
70 45 pF
µA
µA
1999 Fairchild Semiconductor Corporation
EGP20A - EGP20K, Rev. A

T ypical Characteristics
EGP20A-EGP20K
Forward Current Derating Curve
3
2
SINGLE PHASE
HALF WAVE
1
60HZ
RESISTIVE OR
INDUCTIVE LOAD
FORWARD CURRENT (A)
.375" (9.0mm) LEAD
LENGTHS
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
º
Forward Characteri stics
50
EGP20A-EGP20D
10
T = 25 C
º
T = 150 C
A
1
0.1
FORWARD CURRENT (A)
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
EGP20F-EGP20K
Pulse Width = 300µs
2% Duty Cycle
º
A
Non-Repetitive Surge Current
90
75
60
45
30
15
0
PEAK FORWARD SURGE CURRENT (A)
12 51020 50100
NUMBER O F CYCLES A T 60 Hz
Reverse Characteris tics
100
T = 150 C
º
10
µ
1
0.1
0.01
REVERSE CURRENT ( A)
0.001
PERCE NT OF RATED PEAK RE VERSE VOLTAGE (%)
A
T = 125 C
º
A
T = 75 C
º
A
º
T = 25 C
A
0 20406080100120140
140
120
100
80
60
EGP20F-EGP20K
40
CAPACITANCE (pF)
20
0
0.1 1 10 100 1000
50
Ω
NONINDUCTIVE
50V
(approx)
Ω
50
NONINDUCTIVE
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Ω
50
NONINDUCTIVE
DUT
Pulse
Generator
(Note 2)
OSCILLOSCOPE
(Note 1)
(-)
(+)
Reverse Recovery Time Characterstic and Test Circuit Diagram
Juncti o n C apacitan c e
EGP20A-EGP20D
REVERSE VOLTAGE (V)
+0.5A
trr
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR
5/ 10 ns/ cm
EGP20A - EGP20K, Rev. A

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.