Fairchild Semiconductor EGP10K, EGP10F, EGP10D, EGP10J, EGP10G Datasheet

EGP10A - EGP10K

EGP10A-EGP10K

Discrete POWER & Signal

Technologies

Features

• Superfast recovery time for high

efficiency.

• Low forward voltage, high current

capability.

• Low leakage current.

• High surge current capability.

COLOR BAND DENOTES CATHODE

DO-41

1.0 min (25.4)

Dimens i o ns in

inches (mm)

0.205 (5.21)

0.160 (4.06)

0.107 (2.72)

0.080 (2.03)

0.034 (0.86)

0.028 (0.71)

1.0 Ampere Glass Passivated High Efficiency Rectifiers

Absolute Maximum Ratings* T

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

T

stg

T

J

Ave rage Rectified Curren t

.375 " lead length @ T

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimp osed on rated load (JEDEC method)

Total De vice Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient 50
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +150

= 25°C unless otherwise noted

A

= 55°C

L

1.0 A

30 A

2.5
17

mW/°C

C/W

°

W

C

°

C

°

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

10A 10B 10C 10D 10F 10G 10J 10K

Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR)

Maximum Reverse Current

@ rated V

R

TA = 25°C
T

= 125°C

A

Maximum Rev erse Recovery Time
I

= 0.5 A, IR = 1.0 A, I

F

= 0.25 A

rr

Max imum Forwa rd Voltage @ 1.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance

V

= 4.0 V, f = 1.0 MHz

R

1999 Fairchild Semiconductor Corporation

50 100 150 200 300 400 600 800 V

5.0

100

50 75 nS

22 15 pF

EPG10A - EPG10K, Rev. A

A

µ

A

µ

T ypical Characteristics

EGP10A-EGP10K

Forward Curre nt De rating Curve

1

0.75

SINGLE PHASE

0.5

HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD

0.25

.375" (9.0mm) LEAD

FORWARD CURRENT (A)

LENGTHS

0

25 50 75 100 125 150 175

LEAD TEMPER ATURE ( C)

º

Forward Charac t eristics

50

º

T = 150 C

10

EGP10A-EGP10D

1

0.1

FORWARD CURR ENT (A)

0.01

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

A

EGP10F-EGP10K

Pulse Wi dth = 30 0µs
2% Duty Cycle

FORWARD VOLTAGE (V)

T = 25 C

Non-Repetitive Surge Current

30

25

20

15

10

5

0

PEA K F OR WARD SU R G E CUR REN T (A)

1 2 5 10 20 50 100

NUMBER OF CYCLES AT 60Hz

Reverse Char act e ri s tics

1000

100

µ

T = 125 C

º

º

A

10

1

0.1

REVERSE CURRENT ( A)

0.01
0 20406080100120140

PERCE NT OF RATED PEAK RE VERSE VOL TAGE (%)

A

T = 100 C

º

A

º

T = 25 C

A

Junction Capacitance

60

50

40

30

20

CAPACITANCE (pF)

EGP10F-EGP10K

10

0

0.1 1 10 100 1000

50

Ω

NONINDUCTIVE

50V
(approx)

Ω

50
NONINDUCTIVE

NOTES:

1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.

2. Rise time = 10 ns max; Source impedance = 50 ohms.

Ω

50
NONINDUCTIVE

DUT

OSCILLOSCOPE
(Note 1)

REVERSE VOLTAGE (V)

(-)

Pulse
Generator
(Note 2)

(+)

Reverse Recovery Time Characterstic and Test Circuit Diagram

EGP10A-EGP10D

+0.5A

0

-0.25A

-1.0A

1.0cm SET TIME BASE FOR

trr

5/ 10 ns/ cm

EPG10A - EPG10K, Rev. A