Fairchild Semiconductor D45H8 Datasheet
Discrete POWER & Signal
Technologies
D45H8 / NZT45H8
D45H8
B
C
E
TO-220
NZT45H8
C
SOT-223
E
C
B
PNP Power Amplifier
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5Q.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage 60 V
Collector Current - Continuous 8.0 A
Operating and Storage Junction Temperature Range -55 to +150 °C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
D45H8 *NZT45H8
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 2.1 °C/W
Thermal Resistance, Junction to Ambient 62.5 83.3
60
480
1.5
12
2
.
W
mW/°C
°C/W
PNP Power Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
Collector-Emitter Breakdown Voltage IC = 100 mA, IB = 0 60 V
Collector-Cutoff Current VCB = 60 V, IE = 0 10
Em i t ter - Cutoff C u r rent VEB = 5.0 V, IC = 0 100
DC Cu r re n t Ga in IC = 2.0 A, VCE = 1.0 V
= 4.0 A, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 8.0 A, IB = 0.4 A 1.0 V
)
Base-Emitter On Voltage IC = 8.0 A, IB = 0.8 A 1.5 V
)
C
60
40
Base-Emitter On Voltage IC = 10 mA, VCE = 2.0 V 0.54 0.65 V
Current Gain - Bandwidth Product IC = 500 mA, VCE = 10 V, 40 MHz
µ
A
µ
A
D45H8 / NZT45H8
DC Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
200
180
125 ° C
160
140
25 °C
120
100
80
60
- 40 °C
40
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (A)
C
Vce = 5V
Coll ecto r-Emitte r Satu rati on
Vo ltage vs Col lector Cur rent
1
ββ
= 10
0.8
0.6
0.4
0.2
0
0.1 1 10 15
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (A)
C
125 ºC
25 °C
- 40 ºC
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