Fairchild Semiconductor D45H2A Datasheet
D45H2A
PNP Power Amplifier
• This device is designed for power amplifier, regulator and switching
circuits where speed is important.
• Sourced from process 5Q.
D45H2A
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol Parameter Value Units
V
I
T
C
CEO
, T
J
STG
Collector-Emitter Voltage 30 V
Collector Current - Continuous 8.0 A
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
I
CBO
I
EBO
On Characteristics
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 8A, IB = 0.4A 1 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 8A, IB = 0.8A 1.5 V
V
BE
Small Signal Characteristics
f
T
Collector-Emitter Breakdown Voltage IC = 100mA, IB = 0 30 V
Collector Cut-off Current VCB = 60V, IE = 0 10 µA
Emitter Cut-off Current VEB = 5V, IC = 0 100 µA
DC Current Gain VCE = 5V, IC = 8A
Current Gain Bandwidth Product VCE = 10V, IC = 500mA 25 MHz
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
V
= 5V, IC = 10A
CE
= 5V, IC = 12A
V
CE
TO-220
100
80
65
Thermal Characteristics
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
©2002 Fairchild Semiconductor Corporation Rev. A, February 2002
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 2.1 °C/W
Thermal Resistance, Junction to Ambient 62.5 °C/W
TA=25°C unless otherwise noted
60
480
W
mW/°C
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
D45H2A
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, February 2002
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