Fairchild Semiconductor D45C11 Datasheet
D45C11 / NZT45C11
D45C11
B
C
E
TO-220
NZT45C11
C
SOT-223
B
E
C
PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P. See
NZT751 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage 80 V
Collector Current - Continuous 4.0 A
Operating and Storage Junction Temperature Range -55 to +150 °
C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
D45C11 *NZT45C11
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Cas e 2.1
Thermal Resistance, Junction to Ambient 62.5 103 °
60
480
1.2
9.7
2
.
W
mW/°C
°
C/W
C/W
PNP Current Driver
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
I
CES
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
SMALL SIGNAL CHARACTERISTICS
f
T
Collector-Emitter Breakdown
IC = 100 mA, IB = 0 6 0 V
Voltage
Co llector -Cutoff Cu r rent VCB = 90 V, IE = 0 10
Emitter -Cuto ff C u rren t VEB = 5.0 V, IC = 0 100
DC Current Gain IC = 0.2 A, VCE = 1.0 V
= 1.0 A, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 50 mA 0.5 V
)
Base-Emitter On Voltage IC = 1.0 A, IB = 100 mA 1.3 V
)
C
40
20
Current Gain - Bandwidth Product IC = 20 mA, VCE = 4.0 V, 32 MHz
120
µ
A
µ
A
D45C11 / NZT45C11
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