Fairchild Semiconductor CQX15 Datasheet

0.040 (1.02)

0.100 (2.54)

0.050 (1.27)

45°

0.040 (1.02)

13

0.030 (0.76)
NOM

0.184 (4.67)

0.209 (5.31)

1.00 (25.4)
MIN

ANODE
(CASE)

Ø0.020 (0.51) 2X

0.155 (3.94)
MAX

1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.

2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.

3. RMA flux is recommended.

4. Methanol or isopropyl alcohols are recommended as cleaning
agents.

5. Soldering iron tip

1/16” (1.6mm) minimum from housing.

6. As long as leads are not under any stress or spring tension

7. Total power output, PO, is the total power radiated by the device into
a solid angle of 2 ! steradians.

PACKAGE DIMENSIONS

FEATURES

• Good optical to mechanical alignment

• Mechanically and wavelength matched

to the TO-18 series phototransistor

• Hermetically sealed package

• High irradiance level

• European “Pro Electron” registered

Parameter Symbol Rating Unit

Operating Temperature T

OPR

-65 to +125 °C

Storage Temperature T

STG

-65 to +150 °C

Soldering Temperature (Iron)

(3,4,5 and 6)

T

SOL-I

240 for 5 sec °C

Soldering Temperature (Flow)

(3,4 and 6)

T

SOL-F

260 for 10 sec °C

Continuous Forward Current I

F

100 mA

Forward Current (pw, 1µs; 200Hz) I

F

10 A

Reverse Voltage V

R

3V

Power Dissipation(TA= 25°C)

(1)

P

D

170 mW

Power Dissipation(TC= 25°C)

(2)

P

D

1.3 W

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.

CQX15, CQX17

GaAs INFRARED EMITTING DIODE

DESCRIPTION

The CQX15 and CQX17 series are
940nm LEDs in a wide angle, TO-46
package.

SCHEMATIC

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

Peak Emission Wavelength IF= 100 mA "

PE

— 940 — nm
Emission Angle at 1/2 Power # — ±40 — Deg.
Forward Voltage IF= 100 mA V

F

— — 1.7 V
Reverse Leakage Current VR= 3 V I

R

— — 10 µA
Total Power CQX15

(7)

IF= 100 mA P

O

5.4 — — mW

Total Power CQX17

(7)

IF= 100 mA P

O

1.5 — — mW

Rise Time 0-90% of output t

r

— 1.0 — µs
Fall Time 100-10% of output t

f

— 1.0 — µs

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA =25°C) (All measurements made under pulse conditions)



2001 Fairchild Semiconductor Corporation

DS300285 4/26/01 1 OF 3 www.fairchildsemi.com

ANODE

(Connected

To Case)

CATHODE

3

1

www.fairchildsemi.com 2 OF 3 4/26/01 DS300285

CQX15, CQX17

GaAs INFRARED EMITTING DIODE

, NORMALIZED POWER OUTPUT

O

P

Figure 2. Power Output vs. Temperature

1.4

1.2

1.0

0.8

0.6

NORMALIZED TO

0.4

0.2

0

IF = 100 mA

°

C

T

= 25

A

-50

-25 0 150
, AMBIENT TEMPERATURE (°C)

T

A

, NORMALIZED POWER OUTPUT

O

P

100

50

20

10

5

2

1.0

0.5

0.2

0.1

0.05

0.02

0.01
.001 .002 .005 .01 .02 .05 0.1 0.2 0.5 1.0 2 5 10

I

, FORWARD CURRENT (A)

F

NORMALIZED TO
T

IF = 100 mA

°

C

= 25

A

CONTINUOUS
FORWARD
CURRENT

PULSED
P

= 80 µsec

W

FORWARD
CURRENT

Figure 3. Forward Voltage vs. Forward Current

10

8.0

6.0

4.0

2.0

1.0

0.8

0.6

0.4

0.2

, FORWARD CURRENT (A)

0.1

F

I

.08
.06

.04

Figure 1. Power Output vs. Input Current

755025 100 125

.02

.01

01

2

, FORWARD VOLTAGE (V)

V

F

54367109

8

Figure 4. Forward Voltage vs. Forward Current

100

80
60

40

20

10

8
6

4

, FORWARD CURRENT (mA)

F

I

2

1

TA = 100°C 25°C -55°C

.9

1.0 1.1 1.2
V

, FORWARD VOLTAGE (V)

F

100

RELATIVE OUTPUT (%)

1.51.41.3

Figure 5. Typical Radiation Pattern

80

60

40

20

0

-80 -60 -40

θ - ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)

200-20 40 60 80